| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical subthreshold current hump model for deep-submicron shallow-trench-isolated CMOS devices
|
Lin, S.C.
|
|
1998
|
42 |
10 |
p. 1871-1879
9 p.
|
artikel
|
| 2 |
An analytical model for conduction and valence band edge profiles of bandgap graded and displaced heterojunctions
|
Kumar, Kaipa Pavan
|
|
1998
|
42 |
10 |
p. 1779-1786
8 p.
|
artikel
|
| 3 |
An efficient transient modeling for 3-D multilevel interconnections in a stratified dielectric medium
|
Wu, Ching-Yuan
|
|
1998
|
42 |
10 |
p. 1881-1891
11 p.
|
artikel
|
| 4 |
A unified view of the MOS-gated thyristors
|
Huang, Alex Q.
|
|
1998
|
42 |
10 |
p. 1855-1865
11 p.
|
artikel
|
| 5 |
Discussion
|
|
|
1998
|
42 |
10 |
p. 1767-1773
7 p.
|
artikel
|
| 6 |
Electrical characteristics of an aluminum/amorphous selenium rectifying contact
|
Bernède, J.C.
|
|
1998
|
42 |
10 |
p. 1775-1778
4 p.
|
artikel
|
| 7 |
Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers
|
Sheu, Jinn-Kong
|
|
1998
|
42 |
10 |
p. 1867-1869
3 p.
|
artikel
|
| 8 |
1/f Noise in CMOS transistors for analog applications from subthreshold to saturation
|
Jakobson, C.
|
|
1998
|
42 |
10 |
p. 1807-1817
11 p.
|
artikel
|
| 9 |
Impedance, modulation response and equivalent-circuit of 650nm surface emitting type light-emitting diode for POF data-links
|
Dutta, Achyut Kumar
|
|
1998
|
42 |
10 |
p. 1787-1791
5 p.
|
artikel
|
| 10 |
Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
|
Iancu, V.
|
|
1998
|
42 |
10 |
p. 1893-1896
4 p.
|
artikel
|
| 11 |
Selectively dry-etched n+-GaAs/AlGaAs/n-InGaAs doped-channel FETs by using a CHF3+BCl3 plasma
|
Lai, Li-Shyue
|
|
1998
|
42 |
10 |
p. 1793-1797
5 p.
|
artikel
|
| 12 |
Simulation study and realisation of an a-Si:H emitter on GaAs
|
Della Corte, F.G.
|
|
1998
|
42 |
10 |
p. 1819-1825
7 p.
|
artikel
|
| 13 |
SiO2- and ONO-induced substrate current in silicon field-effect transistors
|
De Salvo, B.
|
|
1998
|
42 |
10 |
p. 1839-1847
9 p.
|
artikel
|
| 14 |
Substrate bias dependence of the transconductance of deep submicron silicon NMOSFETs
|
Szelag, B
|
|
1998
|
42 |
10 |
p. 1827-1829
3 p.
|
artikel
|
| 15 |
Thermal stability of OHMIC contacts to InN
|
Donovan, S.M
|
|
1998
|
42 |
10 |
p. 1831-1833
3 p.
|
artikel
|
| 16 |
The role of background concentration in AlInAs/GaInAs/InP based double heterojunction HEMTs
|
Nawaz, M
|
|
1998
|
42 |
10 |
p. 1849-1854
6 p.
|
artikel
|
| 17 |
The temperature-dependence of threshold voltage of N-MOSFETs with nonuniform substrate doping
|
Chen, H.H.
|
|
1998
|
42 |
10 |
p. 1799-1805
7 p.
|
artikel
|
| 18 |
Use of X-ray irradiation for annealing of radiation defects introduced by ion implantation in Si–SiO2 structures
|
Kaschieva, S
|
|
1998
|
42 |
10 |
p. 1835-1838
4 p.
|
artikel
|
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