| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A broadband model for Hg1−x Cd x Te MSM detectors
|
Stumpf, Erich
|
|
1998
|
42 |
1 |
p. 188-189
2 p.
|
artikel
|
| 2 |
A new approach to investigate gate oxide degradation of MOS capacitors during Fowler–Nordheim stress at low electron fluence
|
Samanta, Piyas
|
|
1998
|
42 |
1 |
p. 165-171
7 p.
|
artikel
|
| 3 |
A novel polycrystalline silicon thin film transistor structure for improving hydrogenation effects
|
Park, Cheol-Min
|
|
1998
|
42 |
1 |
p. 185-187
3 p.
|
artikel
|
| 4 |
Comparison of aluminum- and boron-implanted vertical 6H-SiC p+n junction diodes
|
Ramungul, N.
|
|
1998
|
42 |
1 |
p. 17-22
6 p.
|
artikel
|
| 5 |
Design of AlGaInP visible lasers with a low vertical divergence angle
|
Li, W.L.
|
|
1998
|
42 |
1 |
p. 87-90
4 p.
|
artikel
|
| 6 |
Direct-current and alternating-current electroluminescence of MOS capacitors with Si-implanted SiO2
|
Matsuda, Toshihiro
|
|
1998
|
42 |
1 |
p. 129-138
10 p.
|
artikel
|
| 7 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 79-85
7 p.
|
artikel
|
| 8 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 43-48
6 p.
|
artikel
|
| 9 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 73-77
5 p.
|
artikel
|
| 10 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 57-61
5 p.
|
artikel
|
| 11 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 49-56
8 p.
|
artikel
|
| 12 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 23-27
5 p.
|
artikel
|
| 13 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 91-99
9 p.
|
artikel
|
| 14 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 101-106
6 p.
|
artikel
|
| 15 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 29-34
6 p.
|
artikel
|
| 16 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 63-71
9 p.
|
artikel
|
| 17 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 35-41
7 p.
|
artikel
|
| 18 |
Discussion
|
|
|
1998
|
42 |
1 |
p. 173-175
3 p.
|
artikel
|
| 19 |
Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling
|
Mnatsakanov, T.T.
|
|
1998
|
42 |
1 |
p. 153-163
11 p.
|
artikel
|
| 20 |
Electrical and optical characterisation of heavily doped GaAs:C bases of heterojunction bipolar transistors
|
Lye, B.C.
|
|
1998
|
42 |
1 |
p. 115-120
6 p.
|
artikel
|
| 21 |
Electrical and photoelectric properties of Au–SiC Schottky barrier diodes
|
Kosyachenko, L.A.
|
|
1998
|
42 |
1 |
p. 145-151
7 p.
|
artikel
|
| 22 |
Impedance properties of high-frequency pin diodes
|
Lebedev, I.V.
|
|
1998
|
42 |
1 |
p. 121-128
8 p.
|
artikel
|
| 23 |
Improved formulae for determining bulk generation lifetime and surface generation velocity
|
Ding, Koubao
|
|
1998
|
42 |
1 |
p. 181-184
4 p.
|
artikel
|
| 24 |
Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics
|
Mandelis, Andreas
|
|
1998
|
42 |
1 |
p. 1-15
15 p.
|
artikel
|
| 25 |
Ohmic contacts to p-ZnSe using Pd metallization
|
Schwarz, Ralf
|
|
1998
|
42 |
1 |
p. 139-144
6 p.
|
artikel
|
| 26 |
Origin of thin-oxide defects affecting yield and reliability of floating-gate devices and flash memories
|
Itsumi, Manabu
|
|
1998
|
42 |
1 |
p. 107-113
7 p.
|
artikel
|
| 27 |
Simulation and analysis of negative differential resistance devices and circuits by load-line method and PSpice
|
Gan, Kwang-Jow
|
|
1998
|
42 |
1 |
p. 176-180
5 p.
|
artikel
|
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