| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for heterostructure-emitter bipolar transistors
|
Lew, K.L.
|
|
1997
|
41 |
9 |
p. 1337-1344
8 p.
|
artikel
|
| 2 |
Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions
|
Valdinoci, M.
|
|
1997
|
41 |
9 |
p. 1363-1369
7 p.
|
artikel
|
| 3 |
Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs
|
Bravaix, A.
|
|
1997
|
41 |
9 |
p. 1293-1301
9 p.
|
artikel
|
| 4 |
Analytical model for abrupt HBTs with application to InP InGaAs type
|
López-González, Juan M.
|
|
1997
|
41 |
9 |
p. 1277-1283
7 p.
|
artikel
|
| 5 |
Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature
|
Pavanello, Marcelo Antonio
|
|
1997
|
41 |
9 |
p. 1241-1246
6 p.
|
artikel
|
| 6 |
An analytical model for anomalous threshold voltage behavior of short channel MOSFETs
|
Khanna, Manoj K.
|
|
1997
|
41 |
9 |
p. 1386-1388
3 p.
|
artikel
|
| 7 |
A new MOS gate thyristor—The single-gate emitter controlled thyristor (SECT)
|
Zhang, Bo
|
|
1997
|
41 |
9 |
p. 1233-1239
7 p.
|
artikel
|
| 8 |
A non-quasistatic semi-empirical model for small geometry MOSFETs
|
Murray, Daniel
|
|
1997
|
41 |
9 |
p. 1309-1319
11 p.
|
artikel
|
| 9 |
Definition of effective channel length (Leff) in deep submicron MOSFETs based on numerically simulated surface potential
|
Niu, G.F.
|
|
1997
|
41 |
9 |
p. 1377-1382
6 p.
|
artikel
|
| 10 |
Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors
|
Ning, J.H.
|
|
1997
|
41 |
9 |
p. 1263-1268
6 p.
|
artikel
|
| 11 |
Electric field induced shifts of electronic energy levels in spherical quantum dot
|
Bose, C.
|
|
1997
|
41 |
9 |
p. 1383-1385
3 p.
|
artikel
|
| 12 |
Emitter utilization in heterojunction bipolar transistors
|
Quach, T.
|
|
1997
|
41 |
9 |
p. 1303-1308
6 p.
|
artikel
|
| 13 |
Excitation of space charge waves in piezoelectric photorefractive crystals by two counter-propagating acoustic waves
|
Kalinin, V.A.
|
|
1997
|
41 |
9 |
p. 1374-1376
3 p.
|
artikel
|
| 14 |
Latchup-free fully-protected ESD protection circuit for input pad of submicron CMOS ICs
|
Ker, Ming-Dou
|
|
1997
|
41 |
9 |
p. 1329-1336
8 p.
|
artikel
|
| 15 |
Modeling of small size MOSFETs with reverse short channel and narrow width effects for circuit simulation
|
Cheng, Yuhua
|
|
1997
|
41 |
9 |
p. 1227-1231
5 p.
|
artikel
|
| 16 |
Modeling of the recombination at grain boundaries in preferentially doped polysilicon solar cells
|
Arab, Adel Ben
|
|
1997
|
41 |
9 |
p. 1355-1362
8 p.
|
artikel
|
| 17 |
Nonlinear second order current cancellation in HBTs
|
Woywode, Oliver
|
|
1997
|
41 |
9 |
p. 1321-1328
8 p.
|
artikel
|
| 18 |
Pulsed optical switching of junction phototransistors
|
Lazarus, M.J.
|
|
1997
|
41 |
9 |
p. 1251-1255
5 p.
|
artikel
|
| 19 |
Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy
|
Li, G.
|
|
1997
|
41 |
9 |
p. 1207-1225
19 p.
|
artikel
|
| 20 |
Reduced plasma-induced chaging damage in SOI MOSFETs
|
Sherony, Melanie J.
|
|
1997
|
41 |
9 |
p. 1371-1373
3 p.
|
artikel
|
| 21 |
Study of 1 f noise in hydrogenated amorphous silicon thin films
|
Ho, W.Y.
|
|
1997
|
41 |
9 |
p. 1247-1249
3 p.
|
artikel
|
| 22 |
The temperature dependence of 1 f noise in InP
|
Chen, X.Y.
|
|
1997
|
41 |
9 |
p. 1269-1275
7 p.
|
artikel
|
| 23 |
Threshold voltage control in buried-channel MOSFETs
|
Bulucea, Constantin
|
|
1997
|
41 |
9 |
p. 1345-1354
10 p.
|
artikel
|
| 24 |
Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing
|
Seliger, N.
|
|
1997
|
41 |
9 |
p. 1285-1292
8 p.
|
artikel
|
| 25 |
Transition from minority to ambipolar transport in crystalline silicon at high temperatures
|
Elmiger, J.R.
|
|
1997
|
41 |
9 |
p. 1257-1261
5 p.
|
artikel
|
Tijdschrift beschrijving