| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Breakdown characteristics of ultra thin gate oxides following field and temperature stresses
|
Brière, O
|
|
1997
|
41 |
7 |
p. 981-985
5 p.
|
artikel
|
| 2 |
Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
|
Bauer, A.J
|
|
1997
|
41 |
7 |
p. 1057-1065
9 p.
|
artikel
|
| 3 |
CMOS technology for mixed signal ICs
|
Pelgrom, M.J.M
|
|
1997
|
41 |
7 |
p. 967-974
8 p.
|
artikel
|
| 4 |
Defect production, degradation, and breakdown of silicon dioxide films
|
Dimaria, D.J
|
|
1997
|
41 |
7 |
p. 957-965
9 p.
|
artikel
|
| 5 |
Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition
|
Morfouli, P
|
|
1997
|
41 |
7 |
p. 1051-1055
5 p.
|
artikel
|
| 6 |
Electrical characteristics of thin silica layers nitrided by LPCVD nitrogen doped silicon
|
Temple Boyer, P
|
|
1997
|
41 |
7 |
p. 951-955
5 p.
|
artikel
|
| 7 |
Feasibility of steam tunnel oxide for advanced non volatile memories
|
Ghidini, G
|
|
1997
|
41 |
7 |
p. 975-979
5 p.
|
artikel
|
| 8 |
Instability of post-Fowler-Nordheim stress measurements of MOS devices
|
Scarpa, A
|
|
1997
|
41 |
7 |
p. 935-938
4 p.
|
artikel
|
| 9 |
Interface properties of MOS structures on n-type 6HSiC
|
Friedrichs, P
|
|
1997
|
41 |
7 |
p. 991-994
4 p.
|
artikel
|
| 10 |
Investigation of the influence of ramped voltage stress on intrinsic t bd of MOS gate oxides
|
Martin, A
|
|
1997
|
41 |
7 |
p. 1013-1020
8 p.
|
artikel
|
| 11 |
Irradiation effects on the high field behaviour of very thin silica layers
|
Aassime, A
|
|
1997
|
41 |
7 |
p. 945-949
5 p.
|
artikel
|
| 12 |
Is there LOCOS after LOCOS?
|
Deleonibus, S
|
|
1997
|
41 |
7 |
p. 1027-1039
13 p.
|
artikel
|
| 13 |
Low permittivity dielectrics and global planarization for quarter-micron multilevel interconnections
|
Homma, Yoshio
|
|
1997
|
41 |
7 |
p. 1005-1011
7 p.
|
artikel
|
| 14 |
Oscillatory behavior of the tunneling current in ultra thin gate dielectrics: Influence of various physical and technological parameters
|
Brière, O
|
|
1997
|
41 |
7 |
p. 987-990
4 p.
|
artikel
|
| 15 |
Polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides
|
Brożek, T
|
|
1997
|
41 |
7 |
p. 995-999
5 p.
|
artikel
|
| 16 |
Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under Fowler-Nordheim injection
|
Vincent, E
|
|
1997
|
41 |
7 |
p. 1001-1004
4 p.
|
artikel
|
| 17 |
Temperature dependence of transport and trapping properties of oxide-nitride-oxide dielectric films
|
Kies, R
|
|
1997
|
41 |
7 |
p. 1041-1049
9 p.
|
artikel
|
| 18 |
The impact of iron, copper, and calcium contamination of silicon surfaces on the yield of a MOS DRAM test process
|
Burte, E.P
|
|
1997
|
41 |
7 |
p. 1021-1025
5 p.
|
artikel
|
| 19 |
The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes
|
Bär, E
|
|
1997
|
41 |
7 |
p. 939-943
5 p.
|
artikel
|
| 20 |
Thermal oxidation of silicon in the ultrathin regime
|
Massoud, H.Z
|
|
1997
|
41 |
7 |
p. 929-934
6 p.
|
artikel
|
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