| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Cu seed layer for Cu deposition on silicon
|
Lee, M.K
|
|
1997
|
41 |
5 |
p. 695-702
8 p.
|
artikel
|
| 2 |
Analysis of on-state carrier distribution in the DI-LIGBT
|
Sunkavalli, Ravishankar
|
|
1997
|
41 |
5 |
p. 733-738
6 p.
|
artikel
|
| 3 |
An analytical, physics-based linear current-voltage model for hot-carrier damaged LDD nMOSFETS
|
Liu, Shau-Shen
|
|
1997
|
41 |
5 |
p. 793-797
5 p.
|
artikel
|
| 4 |
A new lateral IGBT for high temperature operation
|
Vellvehi, M
|
|
1997
|
41 |
5 |
p. 739-747
9 p.
|
artikel
|
| 5 |
Base resistance measurements in HBTs using base-emitter reverse bias breakdown
|
Hanington, G
|
|
1997
|
41 |
5 |
p. 669-671
3 p.
|
artikel
|
| 6 |
Consistent calculations of multi-quantum well semiconductor optical wave guide modes including the effects of size-quantization and 2D-excitons on the refractive index
|
Maity, A.B
|
|
1997
|
41 |
5 |
p. 798-801
4 p.
|
artikel
|
| 7 |
Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures
|
Pejović, Momčilo
|
|
1997
|
41 |
5 |
p. 715-720
6 p.
|
artikel
|
| 8 |
Current-voltage characteristics of low energy proton and alpha particle irradiated Au and Schottky barrier diodes
|
Arulkumaran, S
|
|
1997
|
41 |
5 |
p. 802-805
4 p.
|
artikel
|
| 9 |
Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
|
Depas, M
|
|
1997
|
41 |
5 |
p. 725-728
4 p.
|
artikel
|
| 10 |
Design of Si and SiGe p-channel SOI MOSFET
|
Peršun, M
|
|
1997
|
41 |
5 |
p. 761-769
9 p.
|
artikel
|
| 11 |
Drain and source resistances of short-channel LDD MOSFETs
|
Rofiqul Hassan, Md
|
|
1997
|
41 |
5 |
p. 778-780
3 p.
|
artikel
|
| 12 |
High temperature annealing of GaN, InN, AlN and related alloys
|
Hong, J
|
|
1997
|
41 |
5 |
p. 681-694
14 p.
|
artikel
|
| 13 |
Hydrogen incorporation and its temperature stability in SiC crystals
|
Zavada, J.M
|
|
1997
|
41 |
5 |
p. 677-679
3 p.
|
artikel
|
| 14 |
Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N2O oxidized nitride films
|
Mazumder, Motaharul Kabir
|
|
1997
|
41 |
5 |
p. 749-755
7 p.
|
artikel
|
| 15 |
Ion implantation of Si, Mg and C into Al0.12Ga0.88N
|
Polyakov, A.Y
|
|
1997
|
41 |
5 |
p. 703-706
4 p.
|
artikel
|
| 16 |
Low-frequency noise in a hybrid photomultiplier tube
|
Hervé, P.J.L
|
|
1997
|
41 |
5 |
p. 663-668
6 p.
|
artikel
|
| 17 |
New approach to two-dimensional semiconductor device simulation on curvilinear grids
|
Patil, M.B
|
|
1997
|
41 |
5 |
p. 789-792
4 p.
|
artikel
|
| 18 |
Parameter extraction for moment equations in GaAs from Monte-Carlo calculations
|
Peschke, Christoph
|
|
1997
|
41 |
5 |
p. 721-724
4 p.
|
artikel
|
| 19 |
Partial breakdown of the tunnel oxide in floating gate devices
|
Fu, Kuan-Yu
|
|
1997
|
41 |
5 |
p. 774-777
4 p.
|
artikel
|
| 20 |
Peculiarities of high-frequency C-V measurements in n-type GaAs thin-film structures
|
Kostylev, S.A
|
|
1997
|
41 |
5 |
p. 784-786
3 p.
|
artikel
|
| 21 |
Porous silicon light-emitting diode with tunable color
|
Chen, Yen-Ann
|
|
1997
|
41 |
5 |
p. 757-759
3 p.
|
artikel
|
| 22 |
Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs
|
Momose, Hisayo Sasaki
|
|
1997
|
41 |
5 |
p. 707-714
8 p.
|
artikel
|
| 23 |
Pt/Ti/Pt/Au Schottky contacts on HEMTs
|
Lothian, J.R
|
|
1997
|
41 |
5 |
p. 673-675
3 p.
|
artikel
|
| 24 |
Quantum mechanical description of quantum well MOSFET in silicon-on-insulator technology
|
Fu, Y
|
|
1997
|
41 |
5 |
p. 729-732
4 p.
|
artikel
|
| 25 |
Rational Chebyshev approximation for the Fermi-Dirac integral F − 3 2 (x)
|
Trellakis, A
|
|
1997
|
41 |
5 |
p. 771-773
3 p.
|
artikel
|
| 26 |
Subthreshold MESFET empirical model
|
Zhang, Weihong
|
|
1997
|
41 |
5 |
p. 781-783
3 p.
|
artikel
|
| 27 |
The breakdown voltage of negative curvatured p + n diodes using a SOI layer
|
Byeon, Dae-Seok
|
|
1997
|
41 |
5 |
p. 787-788
2 p.
|
artikel
|
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