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                                       Details for article 9 of 27 found articles
 
 
  Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
 
 
Title: Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
Author: Depas, M
Nigam, T
Heyns, M.M
Appeared in: Solid-state electronics
Paging: Volume 41 (1997) nr. 5 pages 4 p.
Year: 1997
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 27 found articles
 
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