| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis for relative intensity noise of optoelectronic integrated device by heterojunction phototransistor and laser diode
|
Ahmadi, Vahid
|
|
1997
|
41 |
3 |
p. 465-471
7 p.
|
artikel
|
| 2 |
Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress
|
Samanta, Piyas
|
|
1997
|
41 |
3 |
p. 459-464
6 p.
|
artikel
|
| 3 |
An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion
|
Chen, S.S
|
|
1997
|
41 |
3 |
p. 447-458
12 p.
|
artikel
|
| 4 |
Capacitance-voltage profiling of multiquantum well structures
|
Bobylev, B.A
|
|
1997
|
41 |
3 |
p. 481-486
6 p.
|
artikel
|
| 5 |
Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT)
|
Guo, Der Feng
|
|
1997
|
41 |
3 |
p. 501-506
6 p.
|
artikel
|
| 6 |
Effect of postoxidation cooling on the interface states introduced by ion implantation
|
Kaschieva, S
|
|
1997
|
41 |
3 |
p. 413-415
3 p.
|
artikel
|
| 7 |
Effects of CH4 H2 reactive ion etching on the scattering times of InP heterostructures
|
Cheung, R
|
|
1997
|
41 |
3 |
p. 493-495
3 p.
|
artikel
|
| 8 |
Effects of irradiation on hot carrier induced interface states in n-MOSFETs
|
Das, N.C
|
|
1997
|
41 |
3 |
p. 510-512
3 p.
|
artikel
|
| 9 |
Effects of the series resistance on Fowler-Nordheim tunneling oscillations
|
Hsu, Dongsheng
|
|
1997
|
41 |
3 |
p. 513-514
2 p.
|
artikel
|
| 10 |
Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas
|
Lee, K.N
|
|
1997
|
41 |
3 |
p. 401-404
4 p.
|
artikel
|
| 11 |
Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs
|
Herzel, F
|
|
1997
|
41 |
3 |
p. 387-390
4 p.
|
artikel
|
| 12 |
Homoepitaxial layer from ion-implanted diamond
|
Zhongquan, Ma
|
|
1997
|
41 |
3 |
p. 487-492
6 p.
|
artikel
|
| 13 |
Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices
|
Ringel, Steven A
|
|
1997
|
41 |
3 |
p. 359-380
22 p.
|
artikel
|
| 14 |
Injection-level dependence of charge carrier mobility in high-injection plasma
|
Reznik, D
|
|
1997
|
41 |
3 |
p. 405-412
8 p.
|
artikel
|
| 15 |
Investigation of InGaAs based pseudomorphic step-doped-channel field-effect transistor (SDCFET)
|
Lin, Kun-Wei
|
|
1997
|
41 |
3 |
p. 381-385
5 p.
|
artikel
|
| 16 |
MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range
|
Chen, Kai
|
|
1997
|
41 |
3 |
p. 507-509
3 p.
|
artikel
|
| 17 |
Numerical analysis of temperature dependence of very-short-pulse-induced dynamic latchup in CMOS
|
Iwata, Hideyuki
|
|
1997
|
41 |
3 |
p. 473-479
7 p.
|
artikel
|
| 18 |
Numerical simulation of drain lag in HJFETs on hole-trap substrates
|
Nogome, Masanobu
|
|
1997
|
41 |
3 |
p. 423-428
6 p.
|
artikel
|
| 19 |
On the 1 f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise
|
Markus, H.A.W
|
|
1997
|
41 |
3 |
p. 441-445
5 p.
|
artikel
|
| 20 |
Perimeter and bulk recombination currents in GaAs homojunction diodes and GaAs AlGaAs heterojunction bipolar transistors after surface processing
|
Kalingamudali, S.R.D
|
|
1997
|
41 |
3 |
p. 417-422
6 p.
|
artikel
|
| 21 |
Punchthrough currents in sub-micron short channel MOS transistors
|
Fu, Kuan-Yu
|
|
1997
|
41 |
3 |
p. 435-439
5 p.
|
artikel
|
| 22 |
Reactively sputtered aluminum nitride in GaAs processing
|
Klingbeil, L.S
|
|
1997
|
41 |
3 |
p. 429-433
5 p.
|
artikel
|
| 23 |
Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects
|
Takamiya, Saburo
|
|
1997
|
41 |
3 |
p. 391-399
9 p.
|
artikel
|
| 24 |
The effect of a cap layer on the diffusion of zinc from doped silica films in gallium arsenide
|
Chatterjee, S
|
|
1997
|
41 |
3 |
p. 496-500
5 p.
|
artikel
|
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