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                             21 results found
no title author magazine year volume issue page(s) type
1 Analysis of experimental current oscillations in MOS structures using a semi-empirical tunneling model Miranda, E.
1997
41 1 p. 67-73
7 p.
article
2 A new numerical method for quasi-three-dimensional small-signal simulation of silicon bipolar transistors Sadovnikov, A.D.
1997
41 1 p. 33-40
8 p.
article
3 A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures Jiang, J.
1997
41 1 p. 41-46
6 p.
article
4 Bandgap narrowing in silicon solar cells considering the p-type doping material Nubile, P.
1997
41 1 p. 121-124
4 p.
article
5 Characteristics of fully implanted GaAs vertical PIN diodes Rao, M.V.
1997
41 1 p. 47-50
4 p.
article
6 Composition grading for base transit time minimization in HBTs: An analytical approach Rinaldi, P.
1997
41 1 p. 59-66
8 p.
article
7 Defining a ‘charge vector’ and its use in the treatment of the short channel effect in deep submicron MOSFETs Biesemans, S.
1997
41 1 p. 95-102
8 p.
article
8 Determination of the bulk density of states in a-Si:H by steady-state SCLC C̆ech, Vladimír
1997
41 1 p. 81-86
6 p.
article
9 Editorial Board 1997
41 1 p. IFC-
1 p.
article
10 Electrical behaviour of the InP InGaAs based MSM-2DEG diode Marso, M.
1997
41 1 p. 25-31
7 p.
article
11 Enhanced degradation of nMOSFETs under dynamic stress due to the broad distribution of interface states Hwang, Hyunsang
1997
41 1 p. 125-126
2 p.
article
12 Erratum 1997
41 1 p. 127-
1 p.
article
13 Investigation of doping-spike effect on InGaP GaAs single heterojunction bipolar transistors Lour, Wen-Shiung
1997
41 1 p. 11-16
6 p.
article
14 Measurements of the components of source resistance of HEMTs using slotted transmission line structures Kachwalla, Z.
1997
41 1 p. 51-57
7 p.
article
15 Simulation of multiple filaments in GaAs structures Vashchenko, V.A.
1997
41 1 p. 75-80
6 p.
article
16 Space charge recombination in PN junctions with a discrete and continuous trap distribution Pallarès, J.
1997
41 1 p. 17-23
7 p.
article
17 Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K Pavanello, Marcelo Antonio
1997
41 1 p. 111-119
9 p.
article
18 Thermal emission processes of DX centres in Al x Ga1−x As:Si Enriquez, L.
1997
41 1 p. 103-109
7 p.
article
19 Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals Lee, Ching-Ting
1997
41 1 p. 1-5
5 p.
article
20 Unified substrate current model for MOSFETs Iñíguez, Benjamín
1997
41 1 p. 87-94
8 p.
article
21 ZnSe Si visible-sensitivity emitter bipolar transistors Lour, Wen-Shiung
1997
41 1 p. 7-10
4 p.
article
                             21 results found
 
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