| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of experimental current oscillations in MOS structures using a semi-empirical tunneling model
|
Miranda, E.
|
|
1997
|
41 |
1 |
p. 67-73
7 p.
|
artikel
|
| 2 |
A new numerical method for quasi-three-dimensional small-signal simulation of silicon bipolar transistors
|
Sadovnikov, A.D.
|
|
1997
|
41 |
1 |
p. 33-40
8 p.
|
artikel
|
| 3 |
A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures
|
Jiang, J.
|
|
1997
|
41 |
1 |
p. 41-46
6 p.
|
artikel
|
| 4 |
Bandgap narrowing in silicon solar cells considering the p-type doping material
|
Nubile, P.
|
|
1997
|
41 |
1 |
p. 121-124
4 p.
|
artikel
|
| 5 |
Characteristics of fully implanted GaAs vertical PIN diodes
|
Rao, M.V.
|
|
1997
|
41 |
1 |
p. 47-50
4 p.
|
artikel
|
| 6 |
Composition grading for base transit time minimization in HBTs: An analytical approach
|
Rinaldi, P.
|
|
1997
|
41 |
1 |
p. 59-66
8 p.
|
artikel
|
| 7 |
Defining a ‘charge vector’ and its use in the treatment of the short channel effect in deep submicron MOSFETs
|
Biesemans, S.
|
|
1997
|
41 |
1 |
p. 95-102
8 p.
|
artikel
|
| 8 |
Determination of the bulk density of states in a-Si:H by steady-state SCLC
|
C̆ech, Vladimír
|
|
1997
|
41 |
1 |
p. 81-86
6 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1997
|
41 |
1 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Electrical behaviour of the InP InGaAs based MSM-2DEG diode
|
Marso, M.
|
|
1997
|
41 |
1 |
p. 25-31
7 p.
|
artikel
|
| 11 |
Enhanced degradation of nMOSFETs under dynamic stress due to the broad distribution of interface states
|
Hwang, Hyunsang
|
|
1997
|
41 |
1 |
p. 125-126
2 p.
|
artikel
|
| 12 |
Erratum
|
|
|
1997
|
41 |
1 |
p. 127-
1 p.
|
artikel
|
| 13 |
Investigation of doping-spike effect on InGaP GaAs single heterojunction bipolar transistors
|
Lour, Wen-Shiung
|
|
1997
|
41 |
1 |
p. 11-16
6 p.
|
artikel
|
| 14 |
Measurements of the components of source resistance of HEMTs using slotted transmission line structures
|
Kachwalla, Z.
|
|
1997
|
41 |
1 |
p. 51-57
7 p.
|
artikel
|
| 15 |
Simulation of multiple filaments in GaAs structures
|
Vashchenko, V.A.
|
|
1997
|
41 |
1 |
p. 75-80
6 p.
|
artikel
|
| 16 |
Space charge recombination in PN junctions with a discrete and continuous trap distribution
|
Pallarès, J.
|
|
1997
|
41 |
1 |
p. 17-23
7 p.
|
artikel
|
| 17 |
Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K
|
Pavanello, Marcelo Antonio
|
|
1997
|
41 |
1 |
p. 111-119
9 p.
|
artikel
|
| 18 |
Thermal emission processes of DX centres in Al x Ga1−x As:Si
|
Enriquez, L.
|
|
1997
|
41 |
1 |
p. 103-109
7 p.
|
artikel
|
| 19 |
Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals
|
Lee, Ching-Ting
|
|
1997
|
41 |
1 |
p. 1-5
5 p.
|
artikel
|
| 20 |
Unified substrate current model for MOSFETs
|
Iñíguez, Benjamín
|
|
1997
|
41 |
1 |
p. 87-94
8 p.
|
artikel
|
| 21 |
ZnSe Si visible-sensitivity emitter bipolar transistors
|
Lour, Wen-Shiung
|
|
1997
|
41 |
1 |
p. 7-10
4 p.
|
artikel
|
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