| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact CAD model for amorphous silicon thin film transistors simulation—I. d.c. analysis
|
Merckel, G.
|
|
1996
|
39 |
8 |
p. 1231-1239
9 p.
|
artikel
|
| 2 |
A compact CAD model for amorphous silicon thin film transistors simulation—II. Transient non-quasi-static analysis
|
Merckel, G.
|
|
1996
|
39 |
8 |
p. 1241-1245
5 p.
|
artikel
|
| 3 |
An analytical model of the breakdown voltage and minimum epi layer length for RESURF pn diodes
|
Han, Seung-Youp
|
|
1996
|
39 |
8 |
p. 1247-1248
2 p.
|
artikel
|
| 4 |
A simple d.c. based method for monitoring transistor capacitance
|
Joardar, K.
|
|
1996
|
39 |
8 |
p. 1193-1198
6 p.
|
artikel
|
| 5 |
A two-dimensional analytical model of homojunction GaAs BMFET structures
|
Bellone, S.
|
|
1996
|
39 |
8 |
p. 1221-1229
9 p.
|
artikel
|
| 6 |
A velocity-overshoot capacitance model for 0.1 μm MOS transistors
|
Kuo, J.B.
|
|
1996
|
39 |
8 |
p. 1173-1178
6 p.
|
artikel
|
| 7 |
Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)
|
Thei, Kong-Beng
|
|
1996
|
39 |
8 |
p. 1137-1142
6 p.
|
artikel
|
| 8 |
Contactless characterization of the recombination process in silicon wafers: Separation between bulk and surface contribution
|
Bernini, R.
|
|
1996
|
39 |
8 |
p. 1165-1172
8 p.
|
artikel
|
| 9 |
C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications
|
Passlack, M.
|
|
1996
|
39 |
8 |
p. 1133-1136
4 p.
|
artikel
|
| 10 |
Electron drift velocity versus electric field in III–V semiconductors
|
Majumdar, Amlan
|
|
1996
|
39 |
8 |
p. 1251-1252
2 p.
|
artikel
|
| 11 |
Expressions for the chemical potential in metals and other highly degenerate materials
|
Chua, Chris L.
|
|
1996
|
39 |
8 |
p. 1249-1250
2 p.
|
artikel
|
| 12 |
Growth and characterization of AlGaAs GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
|
Lee, Tsuen-Lin
|
|
1996
|
39 |
8 |
p. 1127-1132
6 p.
|
artikel
|
| 13 |
Hydrodynamic device simulation using new state variables tailored for a block Gummel iterative approach
|
Liang, Wenchao
|
|
1996
|
39 |
8 |
p. 1213-1220
8 p.
|
artikel
|
| 14 |
Ion implantation and secondary ion mass spectrometry of compound semiconductors
|
Wilson, R.G.
|
|
1996
|
39 |
8 |
p. 1113-1125
13 p.
|
artikel
|
| 15 |
Low-temperature impurity breakdown in semiconductors: An approach towards efficient device simulation
|
Kunz, R.E.
|
|
1996
|
39 |
8 |
p. 1155-1164
10 p.
|
artikel
|
| 16 |
Numerical analysis of a new vertical IGBT structure with reduced JFET effect
|
Yun, Chong-Man
|
|
1996
|
39 |
8 |
p. 1179-1183
5 p.
|
artikel
|
| 17 |
Numerical simulation of transconductance in Si SiGe p-MOSFETs
|
Sadovnikov, A.D.
|
|
1996
|
39 |
8 |
p. 1199-1203
5 p.
|
artikel
|
| 18 |
Optimizing high voltage bipolar transistors in a smart-power complementary BiCMOS technology
|
Ryter, R.
|
|
1996
|
39 |
8 |
p. 1185-1191
7 p.
|
artikel
|
| 19 |
Study of 1 f noise in InP grown by CBE
|
Chen, X.Y.
|
|
1996
|
39 |
8 |
p. 1149-1153
5 p.
|
artikel
|
| 20 |
Temperature dependence confirmation of tunneling through 2–6 nm silicon dioxide
|
Lundgren, P.
|
|
1996
|
39 |
8 |
p. 1143-1147
5 p.
|
artikel
|
| 21 |
Time of flight analysis of charge transport in insulators for a finite width charge packet with trapping
|
Mirchina, N.R.
|
|
1996
|
39 |
8 |
p. 1205-1211
7 p.
|
artikel
|
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