| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the validity of methods for extracting the effective channel length of short-channel LDD MOSFETs
|
Latif, Z.
|
|
1996
|
39 |
7 |
p. 1093-1094
2 p.
|
artikel
|
| 2 |
A novel programming method for high speed, low voltage flash E2PROM cells
|
Ranaweera, J.
|
|
1996
|
39 |
7 |
p. 981-989
9 p.
|
artikel
|
| 3 |
A physical model of base resistance from low to high currents for arbitrarily doped submicrometer BJTs
|
Hsu, Tsun-Lai
|
|
1996
|
39 |
7 |
p. 1100-1103
4 p.
|
artikel
|
| 4 |
A soft threshold lucky electron model for efficient and accurate numerical device simulation
|
Jungemann, Chr.
|
|
1996
|
39 |
7 |
p. 1079-1086
8 p.
|
artikel
|
| 5 |
Carrier transport simulation for bulk Al x Ga1−x As with a Γ-L-X band structure based on Lei-Ting balance equations
|
Cao, J.C.
|
|
1996
|
39 |
7 |
p. 971-975
5 p.
|
artikel
|
| 6 |
Comparison of dry etching techniques for InGaP, AlInP and AlGaP
|
Hong, J.
|
|
1996
|
39 |
7 |
p. 1109-1112
4 p.
|
artikel
|
| 7 |
Comparison of non-parabolic hydrodynamic simulations for semiconductor devices
|
Smith, A.W.
|
|
1996
|
39 |
7 |
p. 1055-1063
9 p.
|
artikel
|
| 8 |
Current instability in GaAs n +-i-n + structures as a limitation of the maximum drain voltage of power MESFETs
|
Vashchenko, V.A.
|
|
1996
|
39 |
7 |
p. 1027-1031
5 p.
|
artikel
|
| 9 |
Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP
|
Lee, J.W.
|
|
1996
|
39 |
7 |
p. 1095-1099
5 p.
|
artikel
|
| 10 |
Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors
|
Pichon, L.
|
|
1996
|
39 |
7 |
p. 1065-1069
5 p.
|
artikel
|
| 11 |
Electrical measurement of silicon film and oxide thicknesses in partially depleted SOI technologies
|
Tenbroek, B.M.
|
|
1996
|
39 |
7 |
p. 1011-1014
4 p.
|
artikel
|
| 12 |
Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate
|
Chin, A.
|
|
1996
|
39 |
7 |
p. 1005-1009
5 p.
|
artikel
|
| 13 |
High energy He+ bombardment of n-type InP
|
Sargunas, V.
|
|
1996
|
39 |
7 |
p. 977-980
4 p.
|
artikel
|
| 14 |
Investigation of the importance of high-level injection in abrupt HBTs
|
Adhikari, N.
|
|
1996
|
39 |
7 |
p. 1021-1025
5 p.
|
artikel
|
| 15 |
Measurement and modeling of thin-film accumulation-mode SOI p-MOSFET intrinsic gate capacitances
|
Gentinne, B.
|
|
1996
|
39 |
7 |
p. 1071-1078
8 p.
|
artikel
|
| 16 |
Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors
|
Anholt, R.
|
|
1996
|
39 |
7 |
p. 961-963
3 p.
|
artikel
|
| 17 |
Mobility degradation of inversion layer carriers due to MERIE-type plasma action
|
Atanassova, E.
|
|
1996
|
39 |
7 |
p. 1033-1041
9 p.
|
artikel
|
| 18 |
Modeling and parameter extraction of gate-all-around nMOS/SOI transistors in the linear region
|
Chang, Yun-Shan
|
|
1996
|
39 |
7 |
p. 991-997
7 p.
|
artikel
|
| 19 |
Modeling of hot-carrier stressed characteristics of submicrometer pMOSFETs
|
Jang, Sheng-Lyang
|
|
1996
|
39 |
7 |
p. 1043-1049
7 p.
|
artikel
|
| 20 |
1 ƒ noise as an electromigration characterization tool for W-plug vias between TiN/AlCu/TiN metallizations
|
Çelik-Butler, Z.
|
|
1996
|
39 |
7 |
p. 999-1003
5 p.
|
artikel
|
| 21 |
Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs
|
Chang, Shwu-Jing
|
|
1996
|
39 |
7 |
p. 1015-1020
6 p.
|
artikel
|
| 22 |
pn-Junctions in silicon with blocking capabilities beyond 2.5 kV produced by rapid thermal processing
|
Nagel, D.
|
|
1996
|
39 |
7 |
p. 965-970
6 p.
|
artikel
|
| 23 |
Reliability issues of furnace nitridated oxides prepared with reduced thermal budget in N2O ambient
|
Vincent, E.
|
|
1996
|
39 |
7 |
p. 1051-1054
4 p.
|
artikel
|
| 24 |
Simulation of forward bias injection in proton irradiated silicon pn-junctions
|
Keskitalo, N.
|
|
1996
|
39 |
7 |
p. 1087-1092
6 p.
|
artikel
|
| 25 |
Small-signal microwave characteristics of AlGaAs GaAs heterojunction bipolar transistors using 1D numerical simulation including thermal and parasitic effects
|
Liou, L.L.
|
|
1996
|
39 |
7 |
p. 1104-1108
5 p.
|
artikel
|
| 26 |
The low-frequency noise behaviour of silicon-on-insulator technologies
|
Simoen, E.
|
|
1996
|
39 |
7 |
p. 949-960
12 p.
|
artikel
|
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