| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for specific contact resistance applicable for titanium silicide-silicon contacts
|
Varahramyan, K.
|
|
1996
|
39 |
11 |
p. 1601-1607
7 p.
|
artikel
|
| 2 |
Analytical investigation of electrical performance of metal-insulator-III–V semiconductor field-effect transistors
|
Stengel, F.
|
|
1996
|
39 |
11 |
p. 1567-1576
10 p.
|
artikel
|
| 3 |
Analytical model of collector current density and base transit time based on iteration method
|
Ma, P.
|
|
1996
|
39 |
11 |
p. 1683-1686
4 p.
|
artikel
|
| 4 |
An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs
|
Maneesha,
|
|
1996
|
39 |
11 |
p. 1687-1691
5 p.
|
artikel
|
| 5 |
Applications of ZnO-based glass membranes to mos devices
|
Kobayashi, Keiji
|
|
1996
|
39 |
11 |
p. 1609-1611
3 p.
|
artikel
|
| 6 |
A self-consistent model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors
|
Lacomb, R.
|
|
1996
|
39 |
11 |
p. 1621-1627
7 p.
|
artikel
|
| 7 |
A technique for compensating for temperature variation in low-supply-voltage GaAs DCFL circuits
|
Maeda, Tadashi
|
|
1996
|
39 |
11 |
p. 1543-1547
5 p.
|
artikel
|
| 8 |
Closed-form analytical expressions for the breakdown voltage of GaAs parallel-plane p+n junction in 〈100〉, 〈110〉 and 〈111〉 orientations
|
Chung, Yong-Sung
|
|
1996
|
39 |
11 |
p. 1678-1680
3 p.
|
artikel
|
| 9 |
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
|
Surya, C.
|
|
1996
|
39 |
11 |
p. 1577-1580
4 p.
|
artikel
|
| 10 |
Erratum
|
|
|
1996
|
39 |
11 |
p. 1693-1694
2 p.
|
artikel
|
| 11 |
Low frequency noise characteristics of AlInAs InGaAs heterojunction bipolar transistors
|
Jang, Sheng-Lyang
|
|
1996
|
39 |
11 |
p. 1581-1592
12 p.
|
artikel
|
| 12 |
MBE-grown SiGe base HBT with polysilicon-emitter and TiSi2 base ohmic layer
|
Ryum, B.R.
|
|
1996
|
39 |
11 |
p. 1643-1648
6 p.
|
artikel
|
| 13 |
Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures
|
Gentinne, B.
|
|
1996
|
39 |
11 |
p. 1613-1619
7 p.
|
artikel
|
| 14 |
Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data
|
Rogalski, A.
|
|
1996
|
39 |
11 |
p. 1593-1600
8 p.
|
artikel
|
| 15 |
New hot carrier failure criterion for p-channel transistors based on transistor leakage currents
|
Doyle, B.S.
|
|
1996
|
39 |
11 |
p. 1681-1682
2 p.
|
artikel
|
| 16 |
New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress
|
Lai, P.T.
|
|
1996
|
39 |
11 |
p. 1549-1552
4 p.
|
artikel
|
| 17 |
Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices
|
Smith, A.W.
|
|
1996
|
39 |
11 |
p. 1659-1668
10 p.
|
artikel
|
| 18 |
Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures
|
Mateos, J.
|
|
1996
|
39 |
11 |
p. 1629-1636
8 p.
|
artikel
|
| 19 |
Observation of photon emissions from hot electrons and latch-up at the cleaved surface of CMOS structures
|
Aoki, T.
|
|
1996
|
39 |
11 |
p. 1553-1557
5 p.
|
artikel
|
| 20 |
Resonant tunneling characteristics of a delta-doped strained-layer quantum-well switching device (δ-SQSD)
|
Guo, Der-Feng
|
|
1996
|
39 |
11 |
p. 1637-1641
5 p.
|
artikel
|
| 21 |
Selective and non-selective wet chemical etching of GaAs0.93P0.07
|
Hong, J.
|
|
1996
|
39 |
11 |
p. 1675-1677
3 p.
|
artikel
|
| 22 |
Silicon carbide MOSFET technology
|
Brown, D.M.
|
|
1996
|
39 |
11 |
p. 1531-1542
12 p.
|
artikel
|
| 23 |
Silicon photodiode-waveguide coupling—Two-dimensional modelling, software simulation and experiments
|
Caldararu, M.
|
|
1996
|
39 |
11 |
p. 1649-1657
9 p.
|
artikel
|
| 24 |
Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters
|
Tai, Gwo-Chung
|
|
1996
|
39 |
11 |
p. 1669-1674
6 p.
|
artikel
|
| 25 |
Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
|
Lundberg, N.
|
|
1996
|
39 |
11 |
p. 1559-1565
7 p.
|
artikel
|
Tijdschrift beschrijving