| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis of circuit degradation due to hot-carrier effects in 64Mb DRAMs
|
Huh, Yoonjong
|
|
1996
|
39 |
10 |
p. 1501-1506
6 p.
|
article
|
| 2 |
An analytical model of GaAs OPFET
|
Chakrabarti, P.
|
|
1996
|
39 |
10 |
p. 1481-1490
10 p.
|
article
|
| 3 |
An improved velocity overshoot model for submicron-gate MESFETs
|
Schwierz, F.
|
|
1996
|
39 |
10 |
p. 1522-1523
2 p.
|
article
|
| 4 |
Capacitance technique for the determination of interface state density of metal-semiconductor contact
|
Chattopadhyay, P.
|
|
1996
|
39 |
10 |
p. 1491-1493
3 p.
|
article
|
| 5 |
Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors
|
De Lima, J.A.
|
|
1996
|
39 |
10 |
p. 1524-1525
2 p.
|
article
|
| 6 |
“Excess” polarization of the spontaneous emission in laser heterostructures
|
Ptashchenko, A.A.
|
|
1996
|
39 |
10 |
p. 1495-1500
6 p.
|
article
|
| 7 |
Heat generation in Si bipolar power devices: The relative importance of various contributions
|
Tornblad, O.
|
|
1996
|
39 |
10 |
p. 1463-1471
9 p.
|
article
|
| 8 |
Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
|
Rouquette, P.
|
|
1996
|
39 |
10 |
p. 1423-1426
4 p.
|
article
|
| 9 |
Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits
|
Yen, J.C.
|
|
1996
|
39 |
10 |
p. 1449-1455
7 p.
|
article
|
| 10 |
MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
|
Chen, Kai
|
|
1996
|
39 |
10 |
p. 1515-1518
4 p.
|
article
|
| 11 |
New approach to bias scan DLTS for rapid evaluation of interface states in MOS structures
|
Özder, Serhat
|
|
1996
|
39 |
10 |
p. 1507-1514
8 p.
|
article
|
| 12 |
Noise in mixed tunneling avalanche transit time (MITATT) diodes
|
Dash, G.N.
|
|
1996
|
39 |
10 |
p. 1473-1479
7 p.
|
article
|
| 13 |
On the analysis of C-V curves for high resistivity substrates
|
Estrada del Cueto, M.
|
|
1996
|
39 |
10 |
p. 1519-1521
3 p.
|
article
|
| 14 |
On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes
|
Nathan, M.
|
|
1996
|
39 |
10 |
p. 1457-1462
6 p.
|
article
|
| 15 |
Peculiarities of the initial stage of Zn diffusion into InP from polymer spin-on films
|
Kamanin, A.V.
|
|
1996
|
39 |
10 |
p. 1441-1444
4 p.
|
article
|
| 16 |
Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
|
Gergel, V.
|
|
1996
|
39 |
10 |
p. 1445-1448
4 p.
|
article
|
| 17 |
Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters
|
Tai, Gwo-Chung
|
|
1996
|
39 |
10 |
p. 1526-1528
3 p.
|
article
|
| 18 |
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
|
Casady, J.B.
|
|
1996
|
39 |
10 |
p. 1409-1422
14 p.
|
article
|
| 19 |
The charge controlled analog synapse
|
Agranat, Aharon J.
|
|
1996
|
39 |
10 |
p. 1435-1439
5 p.
|
article
|
| 20 |
Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2
|
Matsuda, Toshihiro
|
|
1996
|
39 |
10 |
p. 1427-1434
8 p.
|
article
|
Journal description