| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate parameter extraction of heterojunctions based on inverse C-V simulation
|
Ogawa, M
|
|
1995
|
38 |
6 |
p. 1197-1207
11 p.
|
artikel
|
| 2 |
A comparison of finite element and finite difference methods for the calculation of capacitance and spreading resistance of stripe lines
|
Nussbaum, A
|
|
1995
|
38 |
6 |
p. 1257-1260
4 p.
|
artikel
|
| 3 |
A linearized model for the temperature sensitivity of P-N junction diodes
|
Khan, M.Fayyaz
|
|
1995
|
38 |
6 |
p. 1279-1281
3 p.
|
artikel
|
| 4 |
An accurate knee current model considering quasi-saturation for BJTs operating at high current density
|
Chen, B.Y
|
|
1995
|
38 |
6 |
p. 1282-1284
3 p.
|
artikel
|
| 5 |
An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs
|
Goo, Jung-Suk
|
|
1995
|
38 |
6 |
p. 1191-1196
6 p.
|
artikel
|
| 6 |
A simple parameter extraction method for ultra-thin oxide MOSFETs
|
McLarty, P.K
|
|
1995
|
38 |
6 |
p. 1175-1177
3 p.
|
artikel
|
| 7 |
Capacitance and spreading resistance of a stripe line
|
Nussbaum, A
|
|
1995
|
38 |
6 |
p. 1253-1256
4 p.
|
artikel
|
| 8 |
Carrier transport across the β-FeSi 2 Si heterojunction
|
Erlesand, U
|
|
1995
|
38 |
6 |
p. 1143-1149
7 p.
|
artikel
|
| 9 |
Characterization of H 2 N 2 plasma passivation process for poly-Si thin film transistors (TFTs)
|
Tsai, M.-J
|
|
1995
|
38 |
6 |
p. 1233-1238
6 p.
|
artikel
|
| 10 |
Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors
|
Drugova, A.A
|
|
1995
|
38 |
6 |
p. 1247-1252
6 p.
|
artikel
|
| 11 |
Current-voltage model of short-channel MOSFETs operated in the linear region
|
Jang, S.-L
|
|
1995
|
38 |
6 |
p. 1239-1245
7 p.
|
artikel
|
| 12 |
Differences in epitaxial-layer/substrate interface properties of hetero-junction field effect transistors fabricated by molecular beam epitaxy and metal organic chemical vapor deposition
|
Kasahara, K
|
|
1995
|
38 |
6 |
p. 1221-1226
6 p.
|
artikel
|
| 13 |
Effect of spatial distribution of illumination intensity on the measured gain of interdigitated photoconductors
|
Riesz, Ferenc
|
|
1995
|
38 |
6 |
p. 1267-1269
3 p.
|
artikel
|
| 14 |
Effect of surface recombination on the transit-time in heavily doped n +-p junction silicon solar cell
|
De, S.S
|
|
1995
|
38 |
6 |
p. 1270-1272
3 p.
|
artikel
|
| 15 |
Effects of nitrogen incorporation during growth on thin oxide wearout and breakdown
|
Dumin, N.A
|
|
1995
|
38 |
6 |
p. 1161-1164
4 p.
|
artikel
|
| 16 |
Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
|
Polyakov, A.Y
|
|
1995
|
38 |
6 |
p. 1131-1135
5 p.
|
artikel
|
| 17 |
Improved mobilities and concentrations in double quantum well InGaAs GaAs pseudomorphic HFETs using multi-coupled δ-doped GaAs
|
Kao, M.J
|
|
1995
|
38 |
6 |
p. 1171-1173
3 p.
|
artikel
|
| 18 |
Influence of low doped emitter and collector regions on high-frequency performance of SiGe-base HBTs
|
Heinemann, B
|
|
1995
|
38 |
6 |
p. 1183-1189
7 p.
|
artikel
|
| 19 |
Monte Carlo formulation of field-dependent mobility for Al x Ga1−x As
|
Zhou, Xing
|
|
1995
|
38 |
6 |
p. 1264-1266
3 p.
|
artikel
|
| 20 |
Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy
|
Pollak, Fred H
|
|
1995
|
38 |
6 |
p. 1121-1129
9 p.
|
artikel
|
| 21 |
Numerical and analytical calculation of collector buried layer resistance in a bipolar transistor
|
Sadovnikov, A.D
|
|
1995
|
38 |
6 |
p. 1261-1263
3 p.
|
artikel
|
| 22 |
On deep electron traps in semi-insulating GaAs crystals by Thermally Stimulated Depolarization Current
|
Guoli, Qu
|
|
1995
|
38 |
6 |
p. 1227-1231
5 p.
|
artikel
|
| 23 |
On the design of composite-collector HBTs
|
Ghodsian, B
|
|
1995
|
38 |
6 |
p. 1275-1278
4 p.
|
artikel
|
| 24 |
Oxidation of a-Si:H ( Si SiO 2 interface properties)
|
Danesh, P
|
|
1995
|
38 |
6 |
p. 1179-1182
4 p.
|
artikel
|
| 25 |
Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2
|
Ohzone, T
|
|
1995
|
38 |
6 |
p. 1165-1170
6 p.
|
artikel
|
| 26 |
Reduction of surface leakage current in edge exposed GaAs P-N junctions by sulfur passivation and its time dependence
|
Tabib-Azar, M
|
|
1995
|
38 |
6 |
p. 1273-1274
2 p.
|
artikel
|
| 27 |
RF current distribution across metal-semiconductor ohmic contacts in mm-wave IMPATTs
|
Sarma, A.S.V
|
|
1995
|
38 |
6 |
p. 1209-1214
6 p.
|
artikel
|
| 28 |
Silicon carbide microwave field-effect transistor: Effect of field dependent mobility
|
Tsap, B
|
|
1995
|
38 |
6 |
p. 1215-1219
5 p.
|
artikel
|
| 29 |
Surface oxidation of polycrystalline cadmium telluride thin films for Schottky barrier junction solar cells
|
Yi, X
|
|
1995
|
38 |
6 |
p. 1151-1154
4 p.
|
artikel
|
| 30 |
The role of hydrogen in current-induced degradation of carbon-doped GaAs AlGaAs heterojunction bipolar transistors
|
Ren, F
|
|
1995
|
38 |
6 |
p. 1137-1141
5 p.
|
artikel
|
| 31 |
Two-dimensional numerical analysis for extracting the effective channel length of short-channel MOSFETs
|
Narayanan, R
|
|
1995
|
38 |
6 |
p. 1155-1159
5 p.
|
artikel
|
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