| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge based capacitance model for high electron mobility transistors
|
Ahn, Hyungkeun
|
|
1995
|
38 |
4 |
p. 943-945
3 p.
|
artikel
|
| 2 |
A 3D thermal model for electrostatic discharge thermal runaway in semiconductor devices
|
Choi, H.H.
|
|
1995
|
38 |
4 |
p. 939-942
4 p.
|
artikel
|
| 3 |
A model to monitor the current gain long-term instability in AlGaAs/GaAs HBTs based on noise and leakage current characteristics
|
Liou, J.J.
|
|
1995
|
38 |
4 |
p. 761-765
5 p.
|
artikel
|
| 4 |
Analysis of double trench insulated gate bipolar transistor
|
Huang, Q.
|
|
1995
|
38 |
4 |
p. 829-838
10 p.
|
artikel
|
| 5 |
Analysis of non-exponential thermally stimulated currents for heavily doped silicon diodes
|
Borchi, Emilio
|
|
1995
|
38 |
4 |
p. 753-759
7 p.
|
artikel
|
| 6 |
An analysis of the kickout mechanism in silicon
|
De Souza, M.M.
|
|
1995
|
38 |
4 |
p. 867-872
6 p.
|
artikel
|
| 7 |
An analytical model for the current transport of graded heterojunction bipolar transistors
|
Liou, J.J.
|
|
1995
|
38 |
4 |
p. 946-948
3 p.
|
artikel
|
| 8 |
A new gate current simulation technique considering Si/SiO2 interface trap generation
|
Wen, Kuei-Shan
|
|
1995
|
38 |
4 |
p. 851-859
9 p.
|
artikel
|
| 9 |
A new method for measuring the saturation velocity of submicron CMOS transistors
|
Schreutelkamp, R.J.
|
|
1995
|
38 |
4 |
p. 791-793
3 p.
|
artikel
|
| 10 |
An improved quasi two-dimensional model for short-channel MOSFETs
|
Hariharan, S.
|
|
1995
|
38 |
4 |
p. 861-866
6 p.
|
artikel
|
| 11 |
Bipolar transistor degradation under dynamic hot carrier stress
|
Horiuchi, Tadahiko
|
|
1995
|
38 |
4 |
p. 787-789
3 p.
|
artikel
|
| 12 |
Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD
|
Wu, Y.H.
|
|
1995
|
38 |
4 |
p. 767-769
3 p.
|
artikel
|
| 13 |
Charge-pumping characteristics of virgin and stressed lightly-doped drain MOSFETs
|
Habaš, Predrag
|
|
1995
|
38 |
4 |
p. 891-904
14 p.
|
artikel
|
| 14 |
DLTS study of deep traps in Si varactor structures
|
Harmatha, L.
|
|
1995
|
38 |
4 |
p. 933-934
2 p.
|
artikel
|
| 15 |
Efficient computer aided design of GaAs and InP millimeter wave transferred electron devices including detailed thermal analysis
|
Zybura, M.F.
|
|
1995
|
38 |
4 |
p. 873-880
8 p.
|
artikel
|
| 16 |
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors
|
Kuphal, E.
|
|
1995
|
38 |
4 |
p. 795-799
5 p.
|
artikel
|
| 17 |
Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY
|
Mohammad, S.N.
|
|
1995
|
38 |
4 |
p. 807-814
8 p.
|
artikel
|
| 18 |
Impact of thermal distribution and emitter length on the performance of microwave heterojunction bipolar transistors
|
Koenig, Eric
|
|
1995
|
38 |
4 |
p. 775-779
5 p.
|
artikel
|
| 19 |
Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides
|
Wu, You-Lin
|
|
1995
|
38 |
4 |
p. 839-843
5 p.
|
artikel
|
| 20 |
Injection-contact phenomena in sub-micron layers of disordered zinc selenide
|
Belyaev, A.P.
|
|
1995
|
38 |
4 |
p. 909-916
8 p.
|
artikel
|
| 21 |
Monte Carlo simulation of hole transport in strained Si1 − x Ge x
|
Yamada, Toshishige
|
|
1995
|
38 |
4 |
p. 881-890
10 p.
|
artikel
|
| 22 |
Numerical analysis of a trench VDMOST structure with no quasi-saturation
|
Zeng, J.
|
|
1995
|
38 |
4 |
p. 821-828
8 p.
|
artikel
|
| 23 |
Off-current in polycrystalline silicon thin film transistors: An analysis of the thermally generated component
|
Pecora, A.
|
|
1995
|
38 |
4 |
p. 845-850
6 p.
|
artikel
|
| 24 |
On coupling the drift-diffusion and Monte Carlo models for MOSFET simulation
|
Patil, Mahesh B.
|
|
1995
|
38 |
4 |
p. 935-936
2 p.
|
artikel
|
| 25 |
On the interface resistance of regrown GaInAs on InP
|
Kiziloḡlu, Kürşad
|
|
1995
|
38 |
4 |
p. 905-908
4 p.
|
artikel
|
| 26 |
On the series resistance of a Schottky diode with cross strip anode
|
Mukhopadhyay, S.
|
|
1995
|
38 |
4 |
p. 937-938
2 p.
|
artikel
|
| 27 |
Rapid thermal nitridation of titanium on Cu/Si contact system
|
Chang, Tzong-Sheng
|
|
1995
|
38 |
4 |
p. 815-820
6 p.
|
artikel
|
| 28 |
Silicon cryogenic MOST
|
Bock, N.E.
|
|
1995
|
38 |
4 |
p. 931-932
2 p.
|
artikel
|
| 29 |
The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
|
Polyakov, A.Y.
|
|
1995
|
38 |
4 |
p. 771-774
4 p.
|
artikel
|
| 30 |
The modified sheet resistance of indium contacts to n-type Hg 1 − x Cd xTe
|
Leech, Patrick W.
|
|
1995
|
38 |
4 |
p. 781-785
5 p.
|
artikel
|
| 31 |
Trench MOS Barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage
|
Mehrotra, Manoj
|
|
1995
|
38 |
4 |
p. 801-806
6 p.
|
artikel
|
| 32 |
Two-dimensional hydrodynamic simulation of submicrometer dual gate MODFETs
|
Sherif, Khaled
|
|
1995
|
38 |
4 |
p. 917-929
13 p.
|
artikel
|
| 33 |
Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model
|
Reeves, Geoffrey K.
|
|
1995
|
38 |
4 |
p. 745-751
7 p.
|
artikel
|
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