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                                       Details for article 12 of 33 found articles
 
 
  Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD
 
 
Title: Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD
Author: Wu, Y.H.
Su, J.S.
Hsu, W.C.
Liu, W.C.
Lin, W.
Appeared in: Solid-state electronics
Paging: Volume 38 (1995) nr. 4 pages 3 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 33 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands