| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A leakage current model for sub-micron lightly-doped drain-offset polysilicon TFTs
|
Jung, L.
|
|
1995
|
38 |
12 |
p. 2069-2073
5 p.
|
artikel
|
| 2 |
Analysis of buried contact solar cells and some rules for their optimum design
|
Morales-Acevedo, Arturo
|
|
1995
|
38 |
12 |
p. 2081-2084
4 p.
|
artikel
|
| 3 |
An analytical drain current model for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices
|
Chen, Y.G.
|
|
1995
|
38 |
12 |
p. 2051-2057
7 p.
|
artikel
|
| 4 |
Anomalous off-current mechanisms in N-channel poly-Si thin film transistors
|
Migliorato, P.
|
|
1995
|
38 |
12 |
p. 2075-2079
5 p.
|
artikel
|
| 5 |
Attenuation losses in electron cyclotron resonance plasma etched AlGaAs waveguides
|
Shul, R.J.
|
|
1995
|
38 |
12 |
p. 2047-
1 p.
|
artikel
|
| 6 |
Avalanche multiplication properties of GaAs calculated from spatially transient ionisation coefficients
|
Wilson, S.P.
|
|
1995
|
38 |
12 |
p. 2095-2100
6 p.
|
artikel
|
| 7 |
Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system
|
Lin, Hsiao-Yi
|
|
1995
|
38 |
12 |
p. 2029-2033
5 p.
|
artikel
|
| 8 |
CoSi2 ohmic contacts to n-type 6HSiC
|
Lundberg, N.
|
|
1995
|
38 |
12 |
p. 2023-2028
6 p.
|
artikel
|
| 9 |
Cosmic ray induced failures in high power semiconductor devices
|
Zeller, H.R.
|
|
1995
|
38 |
12 |
p. 2041-2046
6 p.
|
artikel
|
| 10 |
Cryogenic operation of asymmetric field controlled thyristors
|
Singh, Ranbir
|
|
1995
|
38 |
12 |
p. 2063-2067
5 p.
|
artikel
|
| 11 |
Early voltage in heterojunction bipolar transistors: Quantum tunneling and base recombination effects
|
Krowne, Clifford M.
|
|
1995
|
38 |
12 |
p. 1979-1991
13 p.
|
artikel
|
| 12 |
Effect of collector design on the d.c. characteristics of In0.49Ga0.51P GaAs heterojunction bipolar transistors
|
Hartmann, Q.J.
|
|
1995
|
38 |
12 |
p. 2017-2021
5 p.
|
artikel
|
| 13 |
Effect of ECR plasma on the luminescence efficiency of InGaAs and InP
|
Ren, F.
|
|
1995
|
38 |
12 |
p. 2011-2015
5 p.
|
artikel
|
| 14 |
Electrical characterization of integrated circuit metal line thickness
|
Mayo, Santos
|
|
1995
|
38 |
12 |
p. 1993-2000
8 p.
|
artikel
|
| 15 |
Failure mode analysis of AlGaAs GaAs HBTs using electrostatic discharge method
|
Ota, Yorito
|
|
1995
|
38 |
12 |
p. 2005-2010
6 p.
|
artikel
|
| 16 |
InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy
|
Shiao, Hung-Pin
|
|
1995
|
38 |
12 |
p. 2001-2004
4 p.
|
artikel
|
| 17 |
Integrity of shallow junction CMOS structures with Ti/TiN/AlSiCu and Ti/TiN/AlCu contact metallization
|
Chittipeddi, S.
|
|
1995
|
38 |
12 |
p. 2035-2040
6 p.
|
artikel
|
| 18 |
Ionized dopant concentrations in silicon—An analytical approach
|
Norde, H.
|
|
1995
|
38 |
12 |
p. 2059-2061
3 p.
|
artikel
|
| 19 |
List of contents
|
|
|
1995
|
38 |
12 |
p. iii-xxix
nvt p.
|
artikel
|
| 20 |
Theory of surface photovoltage in a semiconductor with a Schottky contact
|
Choo, S.C.
|
|
1995
|
38 |
12 |
p. 2085-2093
9 p.
|
artikel
|
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