| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison study of Pd/In/Pd, Pd-In/Pd, and PdIn ohmic contacts to n-GaAs
|
Fu, H.G.
|
|
1995
|
38 |
1 |
p. 89-94
6 p.
|
artikel
|
| 2 |
A 2D analytic field-dependent-mobility model for the I-V characteristics of thin film fully-depleted SOI MOSFETs
|
Aggarwal, Vaneeta
|
|
1995
|
38 |
1 |
p. 261-264
4 p.
|
artikel
|
| 3 |
A generalized model for a two-terminal device and its applications to parameter extraction
|
Ortiz-Conde, A
|
|
1995
|
38 |
1 |
p. 265-266
2 p.
|
artikel
|
| 4 |
A method for screening solar cells
|
Appelbaum, J
|
|
1995
|
38 |
1 |
p. 246-248
3 p.
|
artikel
|
| 5 |
A model for dual-channel high electron mobility transistors
|
Gupta, Ravi
|
|
1995
|
38 |
1 |
p. 51-57
7 p.
|
artikel
|
| 6 |
A model for the quantized accumulation layer in metal-insulator-semiconductor structures
|
López-Villanueva, J.A.
|
|
1995
|
38 |
1 |
p. 203-210
8 p.
|
artikel
|
| 7 |
An accurate empirical generalized Einstein relation and its applications to the n(p)-type silicon at high temperatures
|
Van Cong, H.
|
|
1995
|
38 |
1 |
p. 83-87
5 p.
|
artikel
|
| 8 |
Analytical theory of two-dimensional charge sheet model for short channel MOSFETs under non linear charge control
|
Maneesha,
|
|
1995
|
38 |
1 |
p. 197-202
6 p.
|
artikel
|
| 9 |
An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETs
|
Smedes, T.
|
|
1995
|
38 |
1 |
p. 121-130
10 p.
|
artikel
|
| 10 |
An optically controlled InP MIS capacitor
|
Mishra, B.K
|
|
1995
|
38 |
1 |
p. 255-257
3 p.
|
artikel
|
| 11 |
A physical model for the base transit time of advanced bipolar transistors
|
Liou, J.J.
|
|
1995
|
38 |
1 |
p. 143-147
5 p.
|
artikel
|
| 12 |
A small-signal, one-flux analysis of short-base transport
|
Alam, M.A.
|
|
1995
|
38 |
1 |
p. 177-182
6 p.
|
artikel
|
| 13 |
Bandgap narrowing effects on the open circuit voltage in Si, GaAs and InP solar cells
|
Nubile, P.
|
|
1995
|
38 |
1 |
p. 139-142
4 p.
|
artikel
|
| 14 |
Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs
|
Pan, Y.
|
|
1995
|
38 |
1 |
p. 183-187
5 p.
|
artikel
|
| 15 |
Comments on “Substrate-bias-dependent threshold-voltage model of short-channel MOSFET”
|
Dimitruev, Sima
|
|
1995
|
38 |
1 |
p. 267-
1 p.
|
artikel
|
| 16 |
D.c. and a.c. current crowding effects model analysis in bipolar junction transistors using a new extraction method
|
Rhee, Heung-Soo
|
|
1995
|
38 |
1 |
p. 31-35
5 p.
|
artikel
|
| 17 |
D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors
|
Simoen, E.
|
|
1995
|
38 |
1 |
p. 1-8
8 p.
|
artikel
|
| 18 |
Diffusion limited chemical etching effects in semiconductors
|
Tan, S.S.
|
|
1995
|
38 |
1 |
p. 17-24
8 p.
|
artikel
|
| 19 |
Early-voltage degradation in heterostructure bipolar transistors due to interface states
|
Mohajerzadeh, S.
|
|
1995
|
38 |
1 |
p. 131-133
3 p.
|
artikel
|
| 20 |
Editorial Board
|
|
|
1995
|
38 |
1 |
p. IFC-
1 p.
|
artikel
|
| 21 |
Effect of current-voltage characteristics in the non-saturation regime on propagation delay for sub-1V E/D-DCFL inverters
|
Hida, Hikaru
|
|
1995
|
38 |
1 |
p. 249-251
3 p.
|
artikel
|
| 22 |
Ehrenfest derivation of the mean forces acting in materials with nonuniform band structure: A canonical approach
|
Van Vliet, C.M.
|
|
1995
|
38 |
1 |
p. 217-223
7 p.
|
artikel
|
| 23 |
Electron mobility in GaSb
|
Chin, V.W.L.
|
|
1995
|
38 |
1 |
p. 59-67
9 p.
|
artikel
|
| 24 |
Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structure
|
Huang, Tzuen-Hsi
|
|
1995
|
38 |
1 |
p. 115-119
5 p.
|
artikel
|
| 25 |
Fowler-Nordheim limited band-to-band tunneling (FNBB) for p-MOSFET gate current in a floating bulk condition
|
Chao, Kum-Chang
|
|
1995
|
38 |
1 |
p. 135-137
3 p.
|
artikel
|
| 26 |
High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
|
Lu, S.S.
|
|
1995
|
38 |
1 |
p. 25-29
5 p.
|
artikel
|
| 27 |
High resistivity in n-type InP by He+ bombardment at 300 and 60 K
|
Sargūnas, V.
|
|
1995
|
38 |
1 |
p. 75-81
7 p.
|
artikel
|
| 28 |
Infrared multiple-quantum-well phototransistor
|
Ryzhii, V.
|
|
1995
|
38 |
1 |
p. 149-155
7 p.
|
artikel
|
| 29 |
Intrinsic gate delay of Si/SiGe integrated injection logic circuits
|
Mazhari, B.
|
|
1995
|
38 |
1 |
p. 189-196
8 p.
|
artikel
|
| 30 |
Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions
|
Mnatsakanov, T.T.
|
|
1995
|
38 |
1 |
p. 225-233
9 p.
|
artikel
|
| 31 |
Investigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualised physical models
|
Decoutere, S.
|
|
1995
|
38 |
1 |
p. 157-162
6 p.
|
artikel
|
| 32 |
Moderate inversion model of ultrathin double-gate nMOS/SOI transistors
|
Francis, P.
|
|
1995
|
38 |
1 |
p. 171-176
6 p.
|
artikel
|
| 33 |
MOSFET test structures for two-dimensional device simulation
|
Saha, Samar
|
|
1995
|
38 |
1 |
p. 69-73
5 p.
|
artikel
|
| 34 |
New full-voltage-swing multi-drain/multi-collector complementary BiCMOS buffers (M2 CBiCMOS)
|
El-Hady, M.
|
|
1995
|
38 |
1 |
p. 211-216
6 p.
|
artikel
|
| 35 |
Non-destructive technique for estimating gate lengths of MESFETs and HEMTs using low field d.c.-IV data
|
Kachwalla, Zain
|
|
1995
|
38 |
1 |
p. 243-245
3 p.
|
artikel
|
| 36 |
Pinch effect in silicon p-n junction at secondary breakdown coming into existence
|
Puritis, T
|
|
1995
|
38 |
1 |
p. 258-260
3 p.
|
artikel
|
| 37 |
Sequential substrate and channel hot electron injection to separate oxide and interface traps in n-MOSTs
|
Michael Han, K.
|
|
1995
|
38 |
1 |
p. 105-113
9 p.
|
artikel
|
| 38 |
Silicide-caused anomalous reverse current-voltage characteristics of CoSi2 shallow p + n junctions
|
Juang, M.H.
|
|
1995
|
38 |
1 |
p. 101-103
3 p.
|
artikel
|
| 39 |
Study of RTS noise and excess currents in lattice-mismatched InP/InGaAs/InP photodetector arrays
|
Pogany, D.
|
|
1995
|
38 |
1 |
p. 37-49
13 p.
|
artikel
|
| 40 |
Superposition solutions for emitter quantum efficiency
|
Pons, Joan
|
|
1995
|
38 |
1 |
p. 252-254
3 p.
|
artikel
|
| 41 |
The effects of impurity bands on the electrical characteristics of metal-semiconductor ohmic contacts
|
Lou, Yung-Song
|
|
1995
|
38 |
1 |
p. 163-169
7 p.
|
artikel
|
| 42 |
The effects of X-ray irradiation-induced damage on reliability in MOS structures
|
Kim, Shi-ho
|
|
1995
|
38 |
1 |
p. 95-99
5 p.
|
artikel
|
| 43 |
The heterocontact of two intrinsic semiconductors and radiation-stable electronics
|
Gurevich, Yu.G.
|
|
1995
|
38 |
1 |
p. 235-242
8 p.
|
artikel
|
| 44 |
The inclusion of a finite capture time in the numerical simulation of quantum effect devices
|
Gault, M.
|
|
1995
|
38 |
1 |
p. 9-15
7 p.
|
artikel
|
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