| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A breakdown voltage model for implanted resurf p-LDMOS device on n + buried layer
|
Zhou, Ming-Jiang
|
|
1994
|
37 |
7 |
p. 1383-1385
3 p.
|
artikel
|
| 2 |
An accurate solution for the dark diffusion current of preferentially doped polysilicon solar cells
|
Arab, Adel Ben
|
|
1994
|
37 |
7 |
p. 1395-1401
7 p.
|
artikel
|
| 3 |
Approximations for the Fermi-Dirac integrals F j (x)
|
Taher Abuelma'atti, Muhammad
|
|
1994
|
37 |
7 |
p. 1367-1369
3 p.
|
artikel
|
| 4 |
A simple analytical model for gate capacitance-voltage characteristics of HEMTs
|
DasGupta, Amitava
|
|
1994
|
37 |
7 |
p. 1377-1381
5 p.
|
artikel
|
| 5 |
A simple theoretical analysis of the gate capacitance of metal-oxide-semiconductor field effect devices of non-parabolic materials in the presence of a parallel magnetic field
|
Ghatak, K.P.
|
|
1994
|
37 |
7 |
p. 1437-1443
7 p.
|
artikel
|
| 6 |
Au/Pd/Te ohmic contacts on n-type InP
|
Leigh, P.A.
|
|
1994
|
37 |
7 |
p. 1353-1358
6 p.
|
artikel
|
| 7 |
Base and collector currents of pre- and post-burn-in AlGaAs/GaAs heterojunction bipolar transistors
|
Liou, J.J.
|
|
1994
|
37 |
7 |
p. 1349-1352
4 p.
|
artikel
|
| 8 |
Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion
|
Chang, Yang-Hua
|
|
1994
|
37 |
7 |
p. 1413-1419
7 p.
|
artikel
|
| 9 |
Characteristics of trapping states and their equivalent circuit for the Al/InPO4 interface
|
Al-Refaie, S.N.
|
|
1994
|
37 |
7 |
p. 1371-1375
5 p.
|
artikel
|
| 10 |
Comments on “a model of 1/f noise in polysilicon resistors”
|
Luo, Min-Yih
|
|
1994
|
37 |
7 |
p. 1453-1454
2 p.
|
artikel
|
| 11 |
Comments on letter by K. Somogyi
|
Wolkenberg, A.
|
|
1994
|
37 |
7 |
p. 1459-
1 p.
|
artikel
|
| 12 |
Comments on “numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET”
|
Flandre, D.
|
|
1994
|
37 |
7 |
p. 1447-1448
2 p.
|
artikel
|
| 13 |
Determination of energy levels of recombination centers in low-doped Si layers by temperature dependence of recombination lifetime
|
Spirito, P.
|
|
1994
|
37 |
7 |
p. 1429-1436
8 p.
|
artikel
|
| 14 |
Final comment on the letter by A. Wolkenberg et al. [1]
|
Somogyi, K.
|
|
1994
|
37 |
7 |
p. 1460-
1 p.
|
artikel
|
| 15 |
Modeling of edge threshold voltage of mesa-isolated n-channel MOSFETs on fully-depleted thin film SOI
|
Park, Jae-Woo
|
|
1994
|
37 |
7 |
p. 1449-1452
4 p.
|
artikel
|
| 16 |
Modeling the on-state characteristics of the emitter switched thyristor
|
Shekar, M.S.
|
|
1994
|
37 |
7 |
p. 1403-1412
10 p.
|
artikel
|
| 17 |
MOSFET saturation voltage
|
Tu, Robert
|
|
1994
|
37 |
7 |
p. 1445-1446
2 p.
|
artikel
|
| 18 |
Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFETs
|
Ohzone, Takashi
|
|
1994
|
37 |
7 |
p. 1421-1428
8 p.
|
artikel
|
| 19 |
Publisher's note
|
|
|
1994
|
37 |
7 |
p. iii-
1 p.
|
artikel
|
| 20 |
Reassessment of the piezoelectric constant in GaAs by studying the electron transport of high purity MBE-grown GaAs
|
Chin, V.W.L.
|
|
1994
|
37 |
7 |
p. 1345-1347
3 p.
|
artikel
|
| 21 |
Simulation of the transient characteristics of partially- and fully-depleted SOI MOSFETs
|
Tai, Gwo-Chung
|
|
1994
|
37 |
7 |
p. 1387-1394
8 p.
|
artikel
|
| 22 |
Studies on temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP
|
De, S.S.
|
|
1994
|
37 |
7 |
p. 1455-1457
3 p.
|
artikel
|
| 23 |
Transmission matrix approach for electron transport in inversion layers
|
Patil, M.B.
|
|
1994
|
37 |
7 |
p. 1359-1365
7 p.
|
artikel
|
| 24 |
Ultra clean processing of silicon surfaces
|
|
|
1994
|
37 |
7 |
p. I-II
nvt p.
|
artikel
|
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