| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A hydrodynamic transport model and its applications in semiconductor device simulation
|
Zhang, Yaxi
|
|
1993
|
36 |
12 |
p. 1689-1696
8 p.
|
artikel
|
| 2 |
AlAs/GaAs Schottky-collector resonant-tunnel-diodes
|
Konishi, Y.
|
|
1993
|
36 |
12 |
p. 1673-1676
4 p.
|
artikel
|
| 3 |
A note on the Shukla-Sen drift velocity model for hot charge carriers in Ge and Si
|
Roy, D.K.
|
|
1993
|
36 |
12 |
p. 1795-1796
2 p.
|
artikel
|
| 4 |
A study of selective and nonselective reactive ion etching of GaAs/AlGaAs materials
|
Su, Y.K.
|
|
1993
|
36 |
12 |
p. 1779-1785
7 p.
|
artikel
|
| 5 |
Breakdown voltage of high-voltage GaAs Schottky diodes
|
Ashkinazi, G.
|
|
1993
|
36 |
12 |
p. 1793-1794
2 p.
|
artikel
|
| 6 |
Diffusion from zinc-doped spin-on sources into n-gallium antimonide
|
Heinz, C.
|
|
1993
|
36 |
12 |
p. 1685-1688
4 p.
|
artikel
|
| 7 |
Direct bonding of GaAs films on silicon circuits by epitaxial liftoff
|
Ersen, Ali
|
|
1993
|
36 |
12 |
p. 1731-1739
9 p.
|
artikel
|
| 8 |
Editorial: Software survey section
|
|
|
1993
|
36 |
12 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Editors' biographies
|
|
|
1993
|
36 |
12 |
p. v-
1 p.
|
artikel
|
| 10 |
Electrical studies of the reactions between ethanol vapours and inversion mode Si-thin SiO2 structures
|
Atanassova, E.
|
|
1993
|
36 |
12 |
p. 1711-1716
6 p.
|
artikel
|
| 11 |
Equivalent analytical solution for the minority carrier transport in doped silicon
|
Abenante, Luigi
|
|
1993
|
36 |
12 |
p. 1797-1800
4 p.
|
artikel
|
| 12 |
Investigation of Se-doped GaSb epilayers grown by low pressure metal-organic chemical vapor deposition
|
Su, Y.K.
|
|
1993
|
36 |
12 |
p. 1773-1778
6 p.
|
artikel
|
| 13 |
List of contents and author index
|
|
|
1993
|
36 |
12 |
p. i-xxiv
nvt p.
|
artikel
|
| 14 |
Low temperature impurity diffusion in SiC: Planar quantum-size p-n junctions and n-p-n transistor structures
|
Bagraev, N.T.
|
|
1993
|
36 |
12 |
p. 1741-1747
7 p.
|
artikel
|
| 15 |
Modeling the effect of back gate bias on the subthreshold behavior of a SiGe-channel SOI PMOS device
|
Kuo, J.B.
|
|
1993
|
36 |
12 |
p. 1757-1761
5 p.
|
artikel
|
| 16 |
MOSFET effective channel width determination by nonlinear optimization
|
McAndrew, Colin C.
|
|
1993
|
36 |
12 |
p. 1717-1723
7 p.
|
artikel
|
| 17 |
New boundary conditions for the simulation of Schottky structure characteristics
|
Racko, J.
|
|
1993
|
36 |
12 |
p. 1790-1792
3 p.
|
artikel
|
| 18 |
On the characterization of surface states and deep traps in GaAs MESFETs
|
Zhao, J.H.
|
|
1993
|
36 |
12 |
p. 1665-1672
8 p.
|
artikel
|
| 19 |
Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method
|
Ashkinazi, G.
|
|
1993
|
36 |
12 |
p. 1749-1755
7 p.
|
artikel
|
| 20 |
Strain effects on device characteristics: Implementation in drift-diffusion simulators
|
Egley, J.L.
|
|
1993
|
36 |
12 |
p. 1653-1664
12 p.
|
artikel
|
| 21 |
Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors
|
Noor Mohammad, S.
|
|
1993
|
36 |
12 |
p. 1677-1683
7 p.
|
artikel
|
| 22 |
Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−x Ge x layers
|
Poortmans, J.
|
|
1993
|
36 |
12 |
p. 1763-1771
9 p.
|
artikel
|
| 23 |
The temperature and current profiles in an emitter finger as a function of the finger length
|
Liu, William
|
|
1993
|
36 |
12 |
p. 1787-1789
3 p.
|
artikel
|
| 24 |
Thin oxide grown on heavily channel-implanted substrate by using a low temperature wafer loading and N2 pre-annealing process
|
Shye Lin Wu,
|
|
1993
|
36 |
12 |
p. 1725-1730
6 p.
|
artikel
|
| 25 |
Transport via the Liouville equation and moments of quantum distribution functions
|
Grubin, H.L.
|
|
1993
|
36 |
12 |
p. 1697-1709
13 p.
|
artikel
|
| 26 |
W. Crawford Dunlap
|
|
|
1993
|
36 |
12 |
p. iii-
1 p.
|
artikel
|
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