| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A closed-form analytical BJT forward transit time model considering bandgap-narrowing effects and concentration-dependent diffusion coefficients
|
Lu, T.C.
|
|
1992
|
35 |
9 |
p. 1374-1377
4 p.
|
article
|
| 2 |
Analytic d.c. characteristic of space-charge-limited currents with field-dependent mobility
|
Gildenblat, G.Sh.
|
|
1992
|
35 |
9 |
p. 1381-1382
2 p.
|
article
|
| 3 |
An analytical bandgap-narrowing-related current-gain model including concentration dependent diffusion coefficients for VLSI BJT devices
|
Lu, T.C.
|
|
1992
|
35 |
9 |
p. 1371-1373
3 p.
|
article
|
| 4 |
Announcement
|
|
|
1992
|
35 |
9 |
p. I-II
nvt p.
|
article
|
| 5 |
A novel technique for the simultaneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon
|
Rosling, Mats
|
|
1992
|
35 |
9 |
p. 1223-1227
5 p.
|
article
|
| 6 |
A study of current transport in p-N heterojunctions
|
Chen, Shih-Chih
|
|
1992
|
35 |
9 |
p. 1311-1323
13 p.
|
article
|
| 7 |
A thermodynamic model for determining pressure and temperature effects on the bandgap energies and other properties of some semiconductors
|
Ünlü, Hilmi
|
|
1992
|
35 |
9 |
p. 1343-1352
10 p.
|
article
|
| 8 |
Behavior of types A and B hole traps in n-type GaAs during long-period operation
|
Zhou, Jicheng
|
|
1992
|
35 |
9 |
p. 1325-1329
5 p.
|
article
|
| 9 |
Comparison of statistical variation of threshold voltage in bulk and SOI MOSFETs
|
Chen, Hung-sheng
|
|
1992
|
35 |
9 |
p. 1233-1239
7 p.
|
article
|
| 10 |
Contact resistivity measurement using four circular contacts
|
Chua, S.J.
|
|
1992
|
35 |
9 |
p. 1331-1335
5 p.
|
article
|
| 11 |
Contact resistivity of shallow junctions formed by implantation through Pt or PtSi
|
Tsui, Bing-Yue
|
|
1992
|
35 |
9 |
p. 1217-1222
6 p.
|
article
|
| 12 |
Design and performance of a low-threshold-current grating-coupled surface-emitting laser
|
Takigawa, Shinichi
|
|
1992
|
35 |
9 |
p. 1241-1245
5 p.
|
article
|
| 13 |
Determination of the radiation-induced charge centroid in a MIS dielectric
|
Akulov, A.Ph.
|
|
1992
|
35 |
9 |
p. 1353-1357
5 p.
|
article
|
| 14 |
Diffusion in a short base
|
Grinberg, Anatoly A.
|
|
1992
|
35 |
9 |
p. 1299-1309
11 p.
|
article
|
| 15 |
Editorial: Software survey section
|
|
|
1992
|
35 |
9 |
p. III-V
nvt p.
|
article
|
| 16 |
Effect of base grading on the Early voltage of HBTs
|
Liou, J.J.
|
|
1992
|
35 |
9 |
p. 1378-1380
3 p.
|
article
|
| 17 |
Effect of distributed-gate control on current filamentation in thyristors
|
Gorbatyuk, A.V.
|
|
1992
|
35 |
9 |
p. 1359-1364
6 p.
|
article
|
| 18 |
Effects of electric field on photoconductive frequency resolved spectroscopy: Analysis of silicon-on-insulator structures
|
Coromina, F.
|
|
1992
|
35 |
9 |
p. 1337-1342
6 p.
|
article
|
| 19 |
Electrical characterization of hole transport in heavily-doped shallow implanted emitters
|
Pan, Y.
|
|
1992
|
35 |
9 |
p. 1253-1259
7 p.
|
article
|
| 20 |
Investigation of the current-voltage behavior of a combined Schottky-p-n diode
|
Olsson, J.
|
|
1992
|
35 |
9 |
p. 1229-1231
3 p.
|
article
|
| 21 |
Long-channel silicon-on-insulator MOSFET theory
|
Ortiz-Conde, A.
|
|
1992
|
35 |
9 |
p. 1291-1298
8 p.
|
article
|
| 22 |
Majority carrier mobility in highly-doped n-type Si
|
Živanov, M.B.
|
|
1992
|
35 |
9 |
p. 1261-1268
8 p.
|
article
|
| 23 |
Model for drain current RTS amplitude in small-area MOS transistors
|
Roux dit Buisson, O.
|
|
1992
|
35 |
9 |
p. 1273-1276
4 p.
|
article
|
| 24 |
On the calculation of electron mobility in In0.53Ga0.47As
|
Chin, V.W.L.
|
|
1992
|
35 |
9 |
p. 1247-1251
5 p.
|
article
|
| 25 |
Polysilicon emitter design for scaled BiCMOS circuits
|
Cho, Hae-Seok
|
|
1992
|
35 |
9 |
p. 1277-1284
8 p.
|
article
|
| 26 |
Prediction of electromigration failure in W/Al-Cu multilayered metallizations by 1 f noise measurements
|
Çelik-Butler, Zeynep
|
|
1992
|
35 |
9 |
p. 1209-1212
4 p.
|
article
|
| 27 |
Retraction: Bipolar transistor base bandgap grading for minimum delay
|
McGregor, J.M.
|
|
1992
|
35 |
9 |
p. 1383-
1 p.
|
article
|
| 28 |
Self-aligned vertical p-n-p transistor: Device characterization from room to cryogenic temperatures
|
Kuang, J.B.
|
|
1992
|
35 |
9 |
p. 1203-1208
6 p.
|
article
|
| 29 |
Spectroscopy of surface states using the excess noise in a buried-channel MOS transistor
|
Jones, B.K.
|
|
1992
|
35 |
9 |
p. 1285-1289
5 p.
|
article
|
| 30 |
Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes
|
Ng, Sze-Him
|
|
1992
|
35 |
9 |
p. 1213-1216
4 p.
|
article
|
| 31 |
Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping
|
Chen, X.B.
|
|
1992
|
35 |
9 |
p. 1365-1370
6 p.
|
article
|
| 32 |
Thermoelectric cooling effect in a p-Sb2Te3−n-Bi2Te3 thin film thermocouple
|
Patel, N.G.
|
|
1992
|
35 |
9 |
p. 1269-1272
4 p.
|
article
|
Journal description