| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A contactless minority lifetime probe of heterostructures, surfaces, interfaces and bulk wafers
|
Yablonovitch, E.
|
|
1992
|
35 |
3 |
p. 261-267
7 p.
|
article
|
| 2 |
Admittance spectroscopy in junctions
|
Barbolla, J.
|
|
1992
|
35 |
3 |
p. 285-297
13 p.
|
article
|
| 3 |
An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density
|
Witczak, Steven C.
|
|
1992
|
35 |
3 |
p. 345-355
11 p.
|
article
|
| 4 |
An improved feedback circuit for constant-capacitance voltage transient measurements
|
Kolev, Plamen
|
|
1992
|
35 |
3 |
p. 387-389
3 p.
|
article
|
| 5 |
A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement
|
Grivickas, V.
|
|
1992
|
35 |
3 |
p. 299-310
12 p.
|
article
|
| 6 |
BiMOS and SMOSC structures for MOS parameter measurement
|
Nishida, Toshikazu
|
|
1992
|
35 |
3 |
p. 357-369
13 p.
|
article
|
| 7 |
C-mode acoustic microscopy applied to integrated circuit package inspection
|
Moore, T.M.
|
|
1992
|
35 |
3 |
p. 411-421
11 p.
|
article
|
| 8 |
Contactless nondestructive measurement of bulk and surface recombination using frequency-modulated free carrier absorption
|
Sanii, F.
|
|
1992
|
35 |
3 |
p. 311-317
7 p.
|
article
|
| 9 |
Determination of generation lifetime and interface state density using a pulsed silicon-insulator-silicon capacitor
|
Chen, Hung-Sheng
|
|
1992
|
35 |
3 |
p. 371-377
7 p.
|
article
|
| 10 |
Elimination of effects due to patterning imperfections in electrical test structures for submicrometer feature metrology
|
Allen, R.A.
|
|
1992
|
35 |
3 |
p. 435-442
8 p.
|
article
|
| 11 |
Foreword
|
Pierret, Robert F.
|
|
1992
|
35 |
3 |
p. v-
1 p.
|
article
|
| 12 |
High spatial resolution mapping of resistivity variations in semiconductors
|
Kopanski, J.J.
|
|
1992
|
35 |
3 |
p. 423-433
11 p.
|
article
|
| 13 |
Infrared transmission topography for whole-wafer gallium arsenide materials characterization
|
Mier, M.G.
|
|
1992
|
35 |
3 |
p. 319-323
5 p.
|
article
|
| 14 |
Internal reflection infrared spectroscopy for chemical analysis of surfaces and thin films
|
Burrows, V.A.
|
|
1992
|
35 |
3 |
p. 231-238
8 p.
|
article
|
| 15 |
Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors
|
Lovejoy, M.L.
|
|
1992
|
35 |
3 |
p. 251-259
9 p.
|
article
|
| 16 |
Measurement of minority-carrier lifetime by time-resolved photoluminescence
|
Ahrenkiel, R.K.
|
|
1992
|
35 |
3 |
p. 239-250
12 p.
|
article
|
| 17 |
Measurement of the threshold voltage in MOS capacitors by the equilibrium controlled static C-V method
|
Kerber, M.
|
|
1992
|
35 |
3 |
p. 379-385
7 p.
|
article
|
| 18 |
Minimization of errors in ellipsometric measurements
|
Reisinger, H.
|
|
1992
|
35 |
3 |
p. 333-344
12 p.
|
article
|
| 19 |
Profiling the bandgap-adjusted mobility in a bipolar transistor base using the inverse early effect
|
Fischer, S.E.
|
|
1992
|
35 |
3 |
p. 443-446
4 p.
|
article
|
| 20 |
Submicron metrology in the semiconductor industry
|
Corle, Timothy R.
|
|
1992
|
35 |
3 |
p. 391-402
12 p.
|
article
|
| 21 |
The measurement, use and interpretation of the temperature coefficient of resistance of metallizations
|
Schafft, Harry A.
|
|
1992
|
35 |
3 |
p. 403-410
8 p.
|
article
|
| 22 |
Theory of the photovoltage at semiconductor surfaces and its application to diffusion length measurements
|
Choo, S.C.
|
|
1992
|
35 |
3 |
p. 269-283
15 p.
|
article
|
| 23 |
Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
|
Frankel, M.Y.
|
|
1992
|
35 |
3 |
p. 325-332
8 p.
|
article
|
Journal description