| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-form analytical poly-emitter BJT forward transit time model considering bandgap-narrowing effects and concentration-dependent diffusion coefficients for poly-emitter BJT devices
|
Chang, C.C.
|
|
1992
|
35 |
10 |
p. 1556-1560
5 p.
|
artikel
|
| 2 |
A high-threshold low-capacitance MOSFET
|
Lucherini, S.
|
|
1992
|
35 |
10 |
p. 1489-1492
4 p.
|
artikel
|
| 3 |
A new scalable floating-gate EEPROM cell
|
Chang, Ming-Bing
|
|
1992
|
35 |
10 |
p. 1521-1528
8 p.
|
artikel
|
| 4 |
An improved analytical description of the effect of velocity saturation on the collector current of a bipolar transistor
|
Hurkx, G.A.M.
|
|
1992
|
35 |
10 |
p. 1397-1399
3 p.
|
artikel
|
| 5 |
An improved model for the erase operation of a FLOTOX EEPROM cell
|
Chang, Ming-Bing
|
|
1992
|
35 |
10 |
p. 1513-1520
8 p.
|
artikel
|
| 6 |
Announcement
|
|
|
1992
|
35 |
10 |
p. I-
1 p.
|
artikel
|
| 7 |
Back gatebias effects on the pull-down transient behavior in an ultra-thin SOI CMOS inverter operating at 300 K and 77 K
|
Kuo, J.B.
|
|
1992
|
35 |
10 |
p. 1553-1555
3 p.
|
artikel
|
| 8 |
Barrier height enhancement by annealing CrNiCo alloy Schottky contacts on LEC GaAs
|
Türüt, Abdülmecit
|
|
1992
|
35 |
10 |
p. 1423-1426
4 p.
|
artikel
|
| 9 |
Characteristics of a single a-SiC : H/a-Si : H heterostructure as a high-gain photodetector
|
Dutta, Achyut Kumar
|
|
1992
|
35 |
10 |
p. 1483-1488
6 p.
|
artikel
|
| 10 |
Characterization of generation lifetime and deep-level defects in an In 0.4 Ga 0.6 As p−i−n photodiode prepared by molecular beam epitaxy growth on GaAs
|
Tzeng, Yen C.
|
|
1992
|
35 |
10 |
p. 1561-1563
3 p.
|
artikel
|
| 11 |
Characterization of silicided shallow n + p junctions formed by P+ implantation into thin Ti films on Si substrates
|
Juang, M.H.
|
|
1992
|
35 |
10 |
p. 1535-1542
8 p.
|
artikel
|
| 12 |
Cryogenic processing of metal/GaAs schottky diodes
|
Shi, Z.Q.
|
|
1992
|
35 |
10 |
p. 1427-1432
6 p.
|
artikel
|
| 13 |
Description of non-equilibrium phenomena in MIS device under linear voltage ramp bias
|
Zhang, Xiumiao
|
|
1992
|
35 |
10 |
p. 1497-1502
6 p.
|
artikel
|
| 14 |
Editorial: Software survey section
|
|
|
1992
|
35 |
10 |
p. III-V
nvt p.
|
artikel
|
| 15 |
Effect of plasma pre-treatment on Au/p-InP schottky diodes
|
Thomas, H.
|
|
1992
|
35 |
10 |
p. 1401-1407
7 p.
|
artikel
|
| 16 |
Efficient method for numerical modeling of thermal redistribution of interacting impurities under oxidizing ambient
|
Alexandrov, A.L
|
|
1992
|
35 |
10 |
p. 1549-1552
4 p.
|
artikel
|
| 17 |
Electrical characteristics of aligned and transversally recrystallized SOI-MOS transistors
|
Sanchez, G.
|
|
1992
|
35 |
10 |
p. 1447-1450
4 p.
|
artikel
|
| 18 |
Electrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectrics
|
Ma, Z.J.
|
|
1992
|
35 |
10 |
p. 1433-1439
7 p.
|
artikel
|
| 19 |
Formation of self-aligned TiSi2 p +−n junctions by implanting BF2 + ions through thin Ti or SiO2 film on Si substrate rapid thermal annealing
|
Juang, M.H.
|
|
1992
|
35 |
10 |
p. 1529-1534
6 p.
|
artikel
|
| 20 |
GaSb/InGaSb strained-layer quantum wells by MOCVD
|
Su, C.H.
|
|
1992
|
35 |
10 |
p. 1385-1390
6 p.
|
artikel
|
| 21 |
Investigation of AuGeNi contacts using rectangular and circular transmission line model
|
Ahmad, M.
|
|
1992
|
35 |
10 |
p. 1441-1445
5 p.
|
artikel
|
| 22 |
Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation
|
Zimmer, T.
|
|
1992
|
35 |
10 |
p. 1543-1548
6 p.
|
artikel
|
| 23 |
Kink-related low-frequency noise overshoot in Si NMOSTs at liquid helium temperatures
|
Simoen, E.
|
|
1992
|
35 |
10 |
p. 1455-1460
6 p.
|
artikel
|
| 24 |
Latch-up modeling of BiCMOS merged bipolar-MOS structures
|
Liang, S.
|
|
1992
|
35 |
10 |
p. 1461-1469
9 p.
|
artikel
|
| 25 |
1/ƒ noise in MOSFET as a diagnostic tool
|
Xiaosong, Li
|
|
1992
|
35 |
10 |
p. 1477-1481
5 p.
|
artikel
|
| 26 |
1/ƒ noise in series resistance of LDD MOSTs
|
Li, Xiaosong
|
|
1992
|
35 |
10 |
p. 1471-1475
5 p.
|
artikel
|
| 27 |
Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide
|
Chanana, R.K.
|
|
1992
|
35 |
10 |
p. 1417-1421
5 p.
|
artikel
|
| 28 |
Studies on open-circuit photovoltage in heavily doped abrupt p−n junction
|
De, S.S.
|
|
1992
|
35 |
10 |
p. 1564-1566
3 p.
|
artikel
|
| 29 |
Subthreshold current in submicron AlGaAs/GaAs MODFETs
|
Chen, Q.
|
|
1992
|
35 |
10 |
p. 1493-1495
3 p.
|
artikel
|
| 30 |
Surface characterization of LEC Si-GaAs using photoreflectance with sub-bandgap excitation
|
Bhimnathwala, H.
|
|
1992
|
35 |
10 |
p. 1503-1511
9 p.
|
artikel
|
| 31 |
Surface photovoltage in CdMnTe
|
Płaczek-Popko, E.
|
|
1992
|
35 |
10 |
p. 1451-1454
4 p.
|
artikel
|
| 32 |
Theoretical investigation of the lasing characteristics of several GRIN-SCH quantum well lasers
|
Yung, Kai C.
|
|
1992
|
35 |
10 |
p. 1409-1415
7 p.
|
artikel
|
| 33 |
Unified model for drift velocities of electrons and holes in semiconductors as a function of temperature and electric field
|
Mohammad, S.Noor
|
|
1992
|
35 |
10 |
p. 1391-1396
6 p.
|
artikel
|
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