| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high-frequency bidirectional capacitance method to study the evolution of the interface state density generated at low temperatures
|
Lopez-Villanueva, J.A.
|
|
1992
|
35 |
1 |
p. 73-81
9 p.
|
artikel
|
| 2 |
A mechanism for impact ionization of Si n-channel MOSFETs
|
Miyano, Takaya
|
|
1992
|
35 |
1 |
p. 89-94
6 p.
|
artikel
|
| 3 |
An analytical pull-up transient model for a BiCMOS inverter
|
Lu, T.C.
|
|
1992
|
35 |
1 |
p. 1-8
8 p.
|
artikel
|
| 4 |
An efficient deterministic solution of the space-dependent Boltzmann transport equation for silicon
|
Lin, Hongchin
|
|
1992
|
35 |
1 |
p. 33-42
10 p.
|
artikel
|
| 5 |
A simple propagation delay model for BiCMOS driver circuits
|
Deen, M.J.
|
|
1992
|
35 |
1 |
p. 9-13
5 p.
|
artikel
|
| 6 |
Collector signal delay time and collector transit time of HBTs including velocity overshoot
|
Liou, J.J.
|
|
1992
|
35 |
1 |
p. 15-19
5 p.
|
artikel
|
| 7 |
Compositional dependence of Schottky barrier heights of Au on MBE grown GaAs1−x Sb x
|
Zhao, J.H.
|
|
1992
|
35 |
1 |
p. 21-26
6 p.
|
artikel
|
| 8 |
Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs
|
Zhou, Haosheng
|
|
1992
|
35 |
1 |
p. 113-115
3 p.
|
artikel
|
| 9 |
Double-layer collector for heterojunction bipolar transistors
|
Gao, G.B.
|
|
1992
|
35 |
1 |
p. 57-60
4 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
1992
|
35 |
1 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Editorial: Software survey section
|
|
|
1992
|
35 |
1 |
p. I-III
nvt p.
|
artikel
|
| 12 |
Electrical behaviour of a sheet of defects
|
Letartre, X.
|
|
1992
|
35 |
1 |
p. 83-87
5 p.
|
artikel
|
| 13 |
High-temperature silicon diode models
|
Clarke, E.E.
|
|
1992
|
35 |
1 |
p. 103-111
9 p.
|
artikel
|
| 14 |
Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
|
Ma, Z.J.
|
|
1992
|
35 |
1 |
p. 95-102
8 p.
|
artikel
|
| 15 |
Low-frequency open-circuit noise voltage of GaAs pin-avalanche transit-time diodes
|
Huber, S.
|
|
1992
|
35 |
1 |
p. 43-44
2 p.
|
artikel
|
| 16 |
Measurement of the resistance of metal-semiconductor-metal structures using the geometrical magnetoresistance technique
|
Wolkenberg, Andrzej
|
|
1992
|
35 |
1 |
p. 61-65
5 p.
|
artikel
|
| 17 |
Modeling subthreshold capacitances of MOS transistors
|
Afzali-Kushaa, A.
|
|
1992
|
35 |
1 |
p. 45-49
5 p.
|
artikel
|
| 18 |
Modeling the effects of neutron irradiation on LEDs
|
Hajghassem, H.S.
|
|
1992
|
35 |
1 |
p. 51-55
5 p.
|
artikel
|
| 19 |
Temperature and field dependence of carrier mobility in MOSFETs with reoxidized nitrided oxide gate dielectrics
|
Wu, A.T.
|
|
1992
|
35 |
1 |
p. 27-32
6 p.
|
artikel
|
| 20 |
The negative differential resistance behavior of GaAs delta-doped structures
|
Houng, M.P.
|
|
1992
|
35 |
1 |
p. 67-71
5 p.
|
artikel
|
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