| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of radiation and hot-electron-induced damages in MOS capacitors with rapid thermally nitrided thin-gate oxides
|
Joshi, A.B.
|
|
1991
|
34 |
10 |
p. 1023-1028
6 p.
|
artikel
|
| 2 |
Alloy scattering and lattice strain effects on the electron mobility in In1−x Ga xAs
|
Chin, Vincent W.L.
|
|
1991
|
34 |
10 |
p. 1055-1063
9 p.
|
artikel
|
| 3 |
A modified I-V relation for ion-implanted Si OPFETs
|
Pal, B.B.
|
|
1991
|
34 |
10 |
p. 1183-1184
2 p.
|
artikel
|
| 4 |
An analytical all-injection charge-based model for graded-base HBTs
|
Ryum, Byung R.
|
|
1991
|
34 |
10 |
p. 1125-1139
15 p.
|
artikel
|
| 5 |
An efficient solution of the Boltzmann transport equation which includes the Pauli exclusion principle
|
Lin, Hongchin
|
|
1991
|
34 |
10 |
p. 1035-1048
14 p.
|
artikel
|
| 6 |
A novel body contact for SIMOX based SOI MOSFETs
|
Patel, M.
|
|
1991
|
34 |
10 |
p. 1071-1075
5 p.
|
artikel
|
| 7 |
A pragmatic view of inverse-T-gate lightly-doped-drain transistors
|
Goranova, E.
|
|
1991
|
34 |
10 |
p. 1169-1173
5 p.
|
artikel
|
| 8 |
Breakdown voltage of high-voltage bipolar transistors
|
Shahidul Hassan, M.M.
|
|
1991
|
34 |
10 |
p. 1109-1111
3 p.
|
artikel
|
| 9 |
Comment on “optically controlled characteristics of an ion-implanted silicon MESFET” by V.K. Singh et al.
|
Chakrabarti, P.
|
|
1991
|
34 |
10 |
p. 1185-
1 p.
|
artikel
|
| 10 |
Comparison of drain-induced barrier-lowering in short-channel NMOS and PMOS devices at 77 K
|
Yan, Z.X.
|
|
1991
|
34 |
10 |
p. 1065-1070
6 p.
|
artikel
|
| 11 |
Comparison of 1/ƒ noise of AlGaAs/GaAs HEMTs and GaAs MESFETs
|
Tacano, Munecazu
|
|
1991
|
34 |
10 |
p. 1049-1053
5 p.
|
artikel
|
| 12 |
Determination of the trapped charge distribution in scaled silicon nitride MONOS nonvolatile memory devices by tunneling spectroscopy
|
Roy, Anirban
|
|
1991
|
34 |
10 |
p. 1083-1089
7 p.
|
artikel
|
| 13 |
Equilibrium controlled static C-V measurement
|
Kerber, M.
|
|
1991
|
34 |
10 |
p. 1141-1148
8 p.
|
artikel
|
| 14 |
ESD degradation in GaAs MES structures
|
Franklin, A.J.
|
|
1991
|
34 |
10 |
p. 1091-1102
12 p.
|
artikel
|
| 15 |
Estimation of the 2DEG layer location in quantum-well structures
|
Yu, David C.
|
|
1991
|
34 |
10 |
p. 1179-1182
4 p.
|
artikel
|
| 16 |
Explicit analytical expressions for intrinsic base resistance and cutoff frequency of bipolar transistors biased at high injection
|
Lu, T.C.
|
|
1991
|
34 |
10 |
p. 1113-1117
5 p.
|
artikel
|
| 17 |
Influence of ITO deposition technology on the performance of SIS (ITO-SiO2-Si) solar cells
|
Sivridis, D.K.
|
|
1991
|
34 |
10 |
p. 1175-1177
3 p.
|
artikel
|
| 18 |
Modeling the current-dependent ƒ T for AlGaAs/GaAs heterojunction bipolar transistor design
|
Yuan, J.S.
|
|
1991
|
34 |
10 |
p. 1103-1107
5 p.
|
artikel
|
| 19 |
Multi-ring structures for contact resistance measurements on metal-thin-layer semiconductors
|
De Guang, Zhu
|
|
1991
|
34 |
10 |
p. 1165-1167
3 p.
|
artikel
|
| 20 |
On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes
|
Mui, D.
|
|
1991
|
34 |
10 |
p. 1077-1081
5 p.
|
artikel
|
| 21 |
Optimization of GaAs-on-Silicon MESFET structures
|
Halkias, G.
|
|
1991
|
34 |
10 |
p. 1157-1163
7 p.
|
artikel
|
| 22 |
Quantum-size p-n junctions in silicon
|
Bagraev, N.T.
|
|
1991
|
34 |
10 |
p. 1149-1156
8 p.
|
artikel
|
| 23 |
Software survey section
|
|
|
1991
|
34 |
10 |
p. I-III
nvt p.
|
artikel
|
| 24 |
Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor
|
Liu, William U.
|
|
1991
|
34 |
10 |
p. 1119-1123
5 p.
|
artikel
|
| 25 |
Transient simulation of semiconductor devices using the Monte-Carlo method
|
Patil, M.B.
|
|
1991
|
34 |
10 |
p. 1029-1034
6 p.
|
artikel
|
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