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Journal description
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Details for article 1 of 25 found articles
| Title: |
A comparison of radiation and hot-electron-induced damages in MOS capacitors with rapid thermally nitrided thin-gate oxides |
| Author: |
Joshi, A.B. Lo, G.Q. Kwong, D.L. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 34 (1991) nr. 10 pages 6 p. |
| Year: |
1991 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 25 found articles
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