| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high efficiency Si solar cell using tunnel MIS front and back contacts
|
Habib, S.E.-D.
|
|
1990
|
33 |
8 |
p. 1029-1034
6 p.
|
artikel
|
| 2 |
Analysis of the DX traps—Induced transient characteristics in AlGaAs/GaAs HEMTs
|
Wang, Tahui
|
|
1990
|
33 |
8 |
p. 1081-1087
7 p.
|
artikel
|
| 3 |
An equivalent circuit model for transverse acoustoelectric voltage measurements in semiconductors
|
Palma, F.
|
|
1990
|
33 |
8 |
p. 1005-1012
8 p.
|
artikel
|
| 4 |
A new measurement method of MOS transistor parameters
|
Ciofi, C.
|
|
1990
|
33 |
8 |
p. 1065-1069
5 p.
|
artikel
|
| 5 |
A new method of extracting the channel length from the gate current of p-channel MOSFETs
|
Kim, J.S.
|
|
1990
|
33 |
8 |
p. 1097-1106
10 p.
|
artikel
|
| 6 |
Announcement
|
|
|
1990
|
33 |
8 |
p. I-II
nvt p.
|
artikel
|
| 7 |
Editorial—Software survey section
|
|
|
1990
|
33 |
8 |
p. III-V
nvt p.
|
artikel
|
| 8 |
Electrical characterization of Zn+ and P+ co-implanted InP:Fe
|
Woodhouse, J.D.
|
|
1990
|
33 |
8 |
p. 1089-1096
8 p.
|
artikel
|
| 9 |
Electrical inhomogeneity in alloyed AuGeNi contact formed on GaAs
|
Kamada, M.
|
|
1990
|
33 |
8 |
p. 999-1003
5 p.
|
artikel
|
| 10 |
Generalized equations for the steady-state analysis of inhomogeneous semiconductor devices
|
Kishore, R.
|
|
1990
|
33 |
8 |
p. 1049-1054
6 p.
|
artikel
|
| 11 |
Improvement of thin-gate oxide integrity using photo-enhanced low-temperature nitridation
|
Fang, Y.K.
|
|
1990
|
33 |
8 |
p. 1039-1042
4 p.
|
artikel
|
| 12 |
In-situ measurements of magnetic field effects in sub-micron high-electron-mobility transistors
|
Mueller, Eric R.
|
|
1990
|
33 |
8 |
p. 1013-1017
5 p.
|
artikel
|
| 13 |
Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance
|
de Dios, A.
|
|
1990
|
33 |
8 |
p. 987-992
6 p.
|
artikel
|
| 14 |
Low-bias-noise spectroscopy of field-effect transistor channels: Depletion-region trap models and spectra
|
Hallgren, Robert B.
|
|
1990
|
33 |
8 |
p. 1071-1079
9 p.
|
artikel
|
| 15 |
On the nitridation-induced enhancement and degradation of MOSFET characteristics
|
Wong, H.
|
|
1990
|
33 |
8 |
p. 1107-1109
3 p.
|
artikel
|
| 16 |
On the robustness of LDD nMOS transistors subjected to measurement of drain breakdown voltage
|
Aur, Shian
|
|
1990
|
33 |
8 |
p. 1043-1048
6 p.
|
artikel
|
| 17 |
Power MISFETs fabricated with superlatticed gate “insulators” and transition buffer layers
|
Liu, Wen-Chau
|
|
1990
|
33 |
8 |
p. 1019-1024
6 p.
|
artikel
|
| 18 |
Skin effect consideration in metallised substrates of injection controlled transit time effect devices at mm-wave frequencies
|
Ahmad, I.
|
|
1990
|
33 |
8 |
p. 993-998
6 p.
|
artikel
|
| 19 |
The effects of current spreading in the semiconductor on the determination of contact resistance
|
Chua, S.J.
|
|
1990
|
33 |
8 |
p. 1110-1112
3 p.
|
artikel
|
| 20 |
Thermal breakdown in GaAs MES diodes
|
Franklin, A.J.
|
|
1990
|
33 |
8 |
p. 1055-1064
10 p.
|
artikel
|
| 21 |
Two different methods of determining electromigration parameters associated with resistance change
|
van der Ziel, A.
|
|
1990
|
33 |
8 |
p. 1025-1027
3 p.
|
artikel
|
| 22 |
W-band GaAs Gunn diodes with high output power
|
Szubert, J.M.
|
|
1990
|
33 |
8 |
p. 1035-1037
3 p.
|
artikel
|
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