| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical model for strongly inverted and accumulated silicon films
|
Schubert, M.
|
|
1990
|
33 |
12 |
p. 1553-1567
15 p.
|
artikel
|
| 2 |
An electrical study of SIMOX material by a quick-turn-around approach
|
Brady, F.T.
|
|
1990
|
33 |
12 |
p. 1643-1646
4 p.
|
artikel
|
| 3 |
A non-quasi-static small-signal model for metal-semiconductor junction diodes
|
Liou, J.J.
|
|
1990
|
33 |
12 |
p. 1629-1632
4 p.
|
artikel
|
| 4 |
A study of flicker noise in MOS transistors operated at room and liquid helium temperatures
|
Hafez, I.M.
|
|
1990
|
33 |
12 |
p. 1525-1529
5 p.
|
artikel
|
| 5 |
A three layer model of planar alloyed ohmic contacts to n-GaAs
|
Porges, M.
|
|
1990
|
33 |
12 |
p. 1531-1538
8 p.
|
artikel
|
| 6 |
A transient numerical scheme for the simulation of GaAs MESFETs and circuits
|
Xiao, Shuo
|
|
1990
|
33 |
12 |
p. 1519-1524
6 p.
|
artikel
|
| 7 |
A two-dimensional integrated device/circuit numerical model for GaAs DCFL gate simulation
|
Xiao, Shuo
|
|
1990
|
33 |
12 |
p. 1511-1517
7 p.
|
artikel
|
| 8 |
Call for papers
|
|
|
1990
|
33 |
12 |
p. I-
1 p.
|
artikel
|
| 9 |
Editorial — Software survey section
|
|
|
1990
|
33 |
12 |
p. III-V
nvt p.
|
artikel
|
| 10 |
Electrical and structural properties of W-In based ohmic contacts to GaAs
|
Dutta, R.
|
|
1990
|
33 |
12 |
p. 1601-1605
5 p.
|
artikel
|
| 11 |
Extension of the Hooge equation and of the Hooge parameter concept
|
van der Ziel, A.
|
|
1990
|
33 |
12 |
p. 1647-1648
2 p.
|
artikel
|
| 12 |
Flux method for the analysis of excess carrier transport in multilayer devices in the presence of electric field
|
Kishore, R.
|
|
1990
|
33 |
12 |
p. 1545-1552
8 p.
|
artikel
|
| 13 |
Lattice-gas approach to semiconductor device simulation
|
Ancona, M.G.
|
|
1990
|
33 |
12 |
p. 1633-1642
10 p.
|
artikel
|
| 14 |
List of contents and author index volume 33, 1990
|
|
|
1990
|
33 |
12 |
p. i-xix
nvt p.
|
artikel
|
| 15 |
Noise in the quantum efficiency η of p +−n diodes due to fluctuation in the surface generation-recombination of carriers
|
van Der Ziel, A.
|
|
1990
|
33 |
12 |
p. 1649-
1 p.
|
artikel
|
| 16 |
On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling
|
Habaš, Predrag
|
|
1990
|
33 |
12 |
p. 1539-1544
6 p.
|
artikel
|
| 17 |
Optically controlled current-voltage characteristics of ion-implanted MESFETs
|
Mohammad, S.Noor
|
|
1990
|
33 |
12 |
p. 1499-1509
11 p.
|
artikel
|
| 18 |
Physical timing models and design methodology of bipolar nonthreshold logic circuits
|
Wu, Chung-Yu
|
|
1990
|
33 |
12 |
p. 1615-1627
13 p.
|
artikel
|
| 19 |
Pseudo two-dimensional simulation of a three heterojunction GaAs/AlGaAs MODFET
|
Théron, D.
|
|
1990
|
33 |
12 |
p. 1607-1614
8 p.
|
artikel
|
| 20 |
Quantum effects in Si n-MOS inversion layer at high substrate concentration
|
Ohkura, Yasuyuki
|
|
1990
|
33 |
12 |
p. 1581-1585
5 p.
|
artikel
|
| 21 |
SINFET device modeling
|
Ng, W.T.
|
|
1990
|
33 |
12 |
p. 1569-1579
11 p.
|
artikel
|
| 22 |
Stability analysis of correction schemes for spreading resistance measurements
|
Clarysse, T.
|
|
1990
|
33 |
12 |
p. 1587-1600
14 p.
|
artikel
|
| 23 |
Two-polarity intermittent burst noise in Cd x Hg1−x Te
|
Bakshee, I.S.
|
|
1990
|
33 |
12 |
p. 1653-1654
2 p.
|
artikel
|
| 24 |
Voltage dependence of the MOSFET gate-to-source/drain overlap
|
Oh, C.S.
|
|
1990
|
33 |
12 |
p. 1650-1652
3 p.
|
artikel
|
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