| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate engineering model of an n-channel MOSFET for 60–300 K temperature range
|
Huang, C.-L.
|
|
1990
|
33 |
10 |
p. 1309-1318
10 p.
|
artikel
|
| 2 |
An analytical formulation of the peripheral base resistance with application to statistical process variations
|
Hook, Terence B.
|
|
1990
|
33 |
10 |
p. 1319-1326
8 p.
|
artikel
|
| 3 |
A scattering matrix approach to device simulation
|
Das, A.
|
|
1990
|
33 |
10 |
p. 1299-1307
9 p.
|
artikel
|
| 4 |
A titanium dioxide-based MOS hydrogen sensor
|
Yadava, Lallan
|
|
1990
|
33 |
10 |
p. 1229-1234
6 p.
|
artikel
|
| 5 |
Control of current-mode second breakdown in transistors through use of double-graded collectors
|
Hassan, M.M.Shahidul
|
|
1990
|
33 |
10 |
p. 1217-1221
5 p.
|
artikel
|
| 6 |
d.c. Performance of short-channel ion-implanted GaAs MESFETs (The role of gate length shortening)
|
Kuzmik, J.
|
|
1990
|
33 |
10 |
p. 1223-1227
5 p.
|
artikel
|
| 7 |
Dependence of ionization coefficients on well and barrier widths for GaAs/AlGaAs multiple quantum wells
|
Franks, Robert B.
|
|
1990
|
33 |
10 |
p. 1235-1245
11 p.
|
artikel
|
| 8 |
Editorial - software survey section
|
|
|
1990
|
33 |
10 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micron
|
Henrickson, Lindor
|
|
1990
|
33 |
10 |
p. 1275-1278
4 p.
|
artikel
|
| 10 |
Measurement of source and drain series resistances of HIGFETs using a bias-scan method
|
Sun, C.C.
|
|
1990
|
33 |
10 |
p. 1279-1282
4 p.
|
artikel
|
| 11 |
MMSPICE: A semi-numerical mixed-mode device/circuit simulator for advanced bipolar technology CAD
|
Jeong, H.
|
|
1990
|
33 |
10 |
p. 1283-1291
9 p.
|
artikel
|
| 12 |
Modeling the cutoff frequency of Al x Ga1−x As/GaAs/GaAs heterojunction bipolar transistors with proton-implanted collector region
|
Liou, J.J.
|
|
1990
|
33 |
10 |
p. 1329-1331
3 p.
|
artikel
|
| 13 |
On the MOS depletion of a high-level-injection plasma
|
Bulucea, Constantin
|
|
1990
|
33 |
10 |
p. 1247-1253
7 p.
|
artikel
|
| 14 |
The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K
|
Yan, Z.X.
|
|
1990
|
33 |
10 |
p. 1265-1273
9 p.
|
artikel
|
| 15 |
The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes
|
Caverly, Robert H.
|
|
1990
|
33 |
10 |
p. 1255-1263
9 p.
|
artikel
|
| 16 |
Thin-oxide thickness measurement in ellipsometry by a wafer rotation method
|
Hwu, Jenn-Gwo
|
|
1990
|
33 |
10 |
p. 1327-1328
2 p.
|
artikel
|
| 17 |
Velocity-field characteristics for intrinsic and doped central-valley alloy semiconductor Al0.25In0.75As
|
Wu, Ernest Y.
|
|
1990
|
33 |
10 |
p. 1293-1297
5 p.
|
artikel
|
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