| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate analytical expressions for the parameters of the single exponential model of the solar cells
|
Kishore, R.
|
|
1989
|
32 |
6 |
p. 493-495
3 p.
|
artikel
|
| 2 |
A consistent model for semiconductor heterojunctions in equilibrium
|
Chang, K.M.
|
|
1989
|
32 |
6 |
p. 513-514
2 p.
|
artikel
|
| 3 |
A critical analysis of the small-signal voltage-decay technique for minority-carrier lifetime measurement in solar cells
|
Joardar, K.
|
|
1989
|
32 |
6 |
p. 479-483
5 p.
|
artikel
|
| 4 |
An improved propagation-delay-time formula for the submicron n-MOS inverter
|
Ching-Yuan Wu,
|
|
1989
|
32 |
6 |
p. 503-505
3 p.
|
artikel
|
| 5 |
Announcement
|
|
|
1989
|
32 |
6 |
p. i-
1 p.
|
artikel
|
| 6 |
A study of the transient response of position-sensitive detectors
|
Dutta, Achyut Kumar
|
|
1989
|
32 |
6 |
p. 485-492
8 p.
|
artikel
|
| 7 |
Current components of inversely operated vertical transistors for I2L logic circuits
|
Hari Rama Krishna, G.
|
|
1989
|
32 |
6 |
p. 415-420
6 p.
|
artikel
|
| 8 |
Deep-level impurity analysis for p-n junctions of a bipolar transistor from low-frequency g-r noise measurements
|
Dai, Yisong
|
|
1989
|
32 |
6 |
p. 439-443
5 p.
|
artikel
|
| 9 |
Deep trap levels in cuprous oxide
|
Papadimitriou, L.
|
|
1989
|
32 |
6 |
p. 445-448
4 p.
|
artikel
|
| 10 |
Effect of argon implantation on antimony implanted silicon
|
Virdi, G.S.
|
|
1989
|
32 |
6 |
p. 433-438
6 p.
|
artikel
|
| 11 |
Effect of magnetic quantization on the effective electron mass in n-Ge
|
Mitra, B.
|
|
1989
|
32 |
6 |
p. 515-516
2 p.
|
artikel
|
| 12 |
Effect of switching on trapping centers in polycrystalline niobium dioxide
|
Yousuf, M.
|
|
1989
|
32 |
6 |
p. 425-431
7 p.
|
artikel
|
| 13 |
Excess noise in chromium silicides
|
Belan, Jozef
|
|
1989
|
32 |
6 |
p. 421-424
4 p.
|
artikel
|
| 14 |
Generalized electric current density in materials with position-dependent band structure
|
Kishore, R.
|
|
1989
|
32 |
6 |
p. 469-473
5 p.
|
artikel
|
| 15 |
Improved relaxation-time formulation of collision terms for two-band hydrodynamic models
|
Stewart, R.A.
|
|
1989
|
32 |
6 |
p. 497-502
6 p.
|
artikel
|
| 16 |
Physical timing models of small-geometry CMOS inverters and multi-input NAND/NOR gates and their applications
|
Chung-Yu Wu,
|
|
1989
|
32 |
6 |
p. 449-467
19 p.
|
artikel
|
| 17 |
P-type PtSi Schottky-diode barrier height determined from I–V measurement
|
Chin, V.W.L.
|
|
1989
|
32 |
6 |
p. 475-478
4 p.
|
artikel
|
| 18 |
Simos
|
|
|
1989
|
32 |
6 |
p. II-IV
nvt p.
|
artikel
|
| 19 |
Software survey section
|
|
|
1989
|
32 |
6 |
p. I-
1 p.
|
artikel
|
| 20 |
Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges
|
Oh, S.J.
|
|
1989
|
32 |
6 |
p. 507-511
5 p.
|
artikel
|
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