| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of gamma-radiation induced instability mechanisms in CMOS transistors
|
Dimitrijev, S.
|
|
1989
|
32 |
5 |
p. 349-353
5 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1989
|
32 |
5 |
p. I-
1 p.
|
artikel
|
| 3 |
Computer simulations of Schottky contacts with a non-constant recombination velocity
|
Nylander, J.O.
|
|
1989
|
32 |
5 |
p. 363-367
5 p.
|
artikel
|
| 4 |
Editorial - software survey section
|
|
|
1989
|
32 |
5 |
p. III-V
nvt p.
|
artikel
|
| 5 |
Evidence for formation of low resistance TiSi2 layer with Ti/NSi/Ti/native oxide/PSi (100) stack
|
Singh, Awatar
|
|
1989
|
32 |
5 |
p. 413-414
2 p.
|
artikel
|
| 6 |
Heterostructure semiconductor device analysis: A globally convergent solution method for the nonlinear poisson equation
|
Tait, Gregory B.
|
|
1989
|
32 |
5 |
p. 369-376
8 p.
|
artikel
|
| 7 |
Modelling sidewall effects in downscaled bipolar transistors
|
Hurkx, G.A.M.
|
|
1989
|
32 |
5 |
p. 397-404
8 p.
|
artikel
|
| 8 |
Noise and lifetime measurements in Si p +-i-n power diodes
|
Fang, P.
|
|
1989
|
32 |
5 |
p. 345-348
4 p.
|
artikel
|
| 9 |
Photo-induced transient spectroscopy PITS study on undoped LEC grown semi-insulating GaAs
|
Fang, Zhaoqiang
|
|
1989
|
32 |
5 |
p. 405-411
7 p.
|
artikel
|
| 10 |
Photosensitivity of the capacitance of aSiC x :H/P + PcSi heterojunctions
|
Wang, Wanlu
|
|
1989
|
32 |
5 |
p. 361-362
2 p.
|
artikel
|
| 11 |
Resistivity changes in acceptor doped BaTiO3 due to sintering and annealing in hydrogen containing atmospheres
|
Boser, O.
|
|
1989
|
32 |
5 |
p. 377-383
7 p.
|
artikel
|
| 12 |
Si/Ti/TiB2/Al structures investigated as contacts in microelectronic devices
|
Larsson, T.
|
|
1989
|
32 |
5 |
p. 385-389
5 p.
|
artikel
|
| 13 |
Study of bandgap narrowing in the space-charge region of heavily doped silicon MOS capacitors
|
Chen, H.C.
|
|
1989
|
32 |
5 |
p. 339-344
6 p.
|
artikel
|
| 14 |
The passivation of silicon devices by aSi:H films
|
He, Yuliang
|
|
1989
|
32 |
5 |
p. 355-359
5 p.
|
artikel
|
| 15 |
Thin-film transistors from very low temperature polycrystalline Si on glass substrates
|
Schmolla, W.
|
|
1989
|
32 |
5 |
p. 391-396
6 p.
|
artikel
|
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