| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for MOSFET parameter extraction at very low temperature
|
Ghibaudo, Gerard
|
|
1989
|
32 |
3 |
p. 221-223
3 p.
|
artikel
|
| 2 |
A MOSFET model of the exponential profile approximation for induced carrier density
|
Suh, Chung H.
|
|
1989
|
32 |
3 |
p. 215-220
6 p.
|
artikel
|
| 3 |
An investigation of the nature and mechanisms of ESD damage in NMOS transistors
|
Amerasekera, E.A.
|
|
1989
|
32 |
3 |
p. 199-206
8 p.
|
artikel
|
| 4 |
Announcement
|
|
|
1989
|
32 |
3 |
p. III-IV
nvt p.
|
artikel
|
| 5 |
A numerical analysis for the small-signal response of the MOS capacitor
|
Gaitan, Michael
|
|
1989
|
32 |
3 |
p. 207-213
7 p.
|
artikel
|
| 6 |
Computer analysis of Cs3Sb photocathodes
|
Yang, B.
|
|
1989
|
32 |
3 |
p. 243-246
4 p.
|
artikel
|
| 7 |
Corrigendum
|
|
|
1989
|
32 |
3 |
p. I-
1 p.
|
artikel
|
| 8 |
Degradation induced changes of characteristic parameters of GaAs:Si infrared emitting diodes
|
Venghaus, H.
|
|
1989
|
32 |
3 |
p. 225-234
10 p.
|
artikel
|
| 9 |
Diffusion effects in short-channel GaAs MESFETs
|
Sandborn, P.A.
|
|
1989
|
32 |
3 |
p. 191-198
8 p.
|
artikel
|
| 10 |
Editorial — software survey section
|
|
|
1989
|
32 |
3 |
p. V-VII
nvt p.
|
artikel
|
| 11 |
Numerical and experimental comparison of 60 V vertical double-diffused MOSFETs and MOSFETs with a trench-gate structure
|
Chang, H.-R.
|
|
1989
|
32 |
3 |
p. 247-251
5 p.
|
artikel
|
| 12 |
Role of interfacial oxide thickness and surface states in the performance of MIS solar cells
|
Biswas, Swati
|
|
1989
|
32 |
3 |
p. 259-260
2 p.
|
artikel
|
| 13 |
Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks
|
Eisele, Heribert
|
|
1989
|
32 |
3 |
p. 253-257
5 p.
|
artikel
|
| 14 |
Self-aligned V-groove etched devices
|
Solheim, Alan G.
|
|
1989
|
32 |
3 |
p. 235-242
8 p.
|
artikel
|
| 15 |
Switching characteristics of MINPN devices
|
Chang, David C.Y.
|
|
1989
|
32 |
3 |
p. 179-189
11 p.
|
artikel
|
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