| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A graphical method for determining the parameters of a diffusion profile in silicon by infrared reflection spectroscopy
|
Hild, Erzsébet
|
|
1989
|
32 |
1 |
p. 69-76
8 p.
|
artikel
|
| 2 |
A model for the intrinsic gate capacitances of short channel MOSFETs
|
Gharabagi, R.
|
|
1989
|
32 |
1 |
p. 57-63
7 p.
|
artikel
|
| 3 |
Analytical modeling of the transconductance of short channel MOSFETs in the saturation region
|
Ghibaudo, Gerard
|
|
1989
|
32 |
1 |
p. 87-89
3 p.
|
artikel
|
| 4 |
A study of electromigration in aluminum and aluminum-silicon thin film resistors using noise technique
|
Diligenti, A.
|
|
1989
|
32 |
1 |
p. 11-16
6 p.
|
artikel
|
| 5 |
Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructure
|
Tacano, Munecazu
|
|
1989
|
32 |
1 |
p. 49-55
7 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
1989
|
32 |
1 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Editorial—Software survey section
|
|
|
1989
|
32 |
1 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Formulation of surface 1 ƒ noise processes in bipolar junction transistors and in p−n diodes in Hooge-type form
|
van der Ziel, A.
|
|
1989
|
32 |
1 |
p. 91-93
3 p.
|
artikel
|
| 9 |
Generalized transconductance and transresistance methods for MOSFET characterization
|
Jain, Sanjay
|
|
1989
|
32 |
1 |
p. 77-86
10 p.
|
artikel
|
| 10 |
Hot-carrier effects in depletion-mode MOSFETs
|
Ong, T.-C.
|
|
1989
|
32 |
1 |
p. 33-36
4 p.
|
artikel
|
| 11 |
Interpretation of capacitance-voltage characteristics on silicon-on-insulator (SOI) capacitors
|
McDaid, L.J.
|
|
1989
|
32 |
1 |
p. 65-68
4 p.
|
artikel
|
| 12 |
Modeling and performance of double heterojunction GaAlAs/GaAs integrated injection logic
|
Marty, A.
|
|
1989
|
32 |
1 |
p. 37-47
11 p.
|
artikel
|
| 13 |
Piezoresistance in polysilicon and its applications to strain gauges
|
French, P.J.
|
|
1989
|
32 |
1 |
p. 1-10
10 p.
|
artikel
|
| 14 |
Studies of surface voltage and current transients in solar cells for accurate evaluation of minority carrier lifetime
|
Vishnoi, Arti
|
|
1989
|
32 |
1 |
p. 17-24
8 p.
|
artikel
|
| 15 |
Study of deep traps using the frequency-dependence of the temperature derivative of PN junction capacitance
|
Tan, Changhua
|
|
1989
|
32 |
1 |
p. 25-32
8 p.
|
artikel
|
| 16 |
Thermionic emission currents in bulk-barrier heterojunctions
|
Maby, E.W.
|
|
1989
|
32 |
1 |
p. 95-96
2 p.
|
artikel
|
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