| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new minority carrier lifetime model for heavily doped GaAs and InGaAsP to obtain analytical solutions
|
Selvakumar, C.R.
|
|
1987
|
30 |
7 |
p. 773-774
2 p.
|
artikel
|
| 2 |
A new simple analytical emitter model for bipolar transistors
|
Selvakumar, C.R.
|
|
1987
|
30 |
7 |
p. 723-728
6 p.
|
artikel
|
| 3 |
A new structure in junction devices
|
Kao, Yu C.
|
|
1987
|
30 |
7 |
p. 739-743
5 p.
|
artikel
|
| 4 |
An improved AuGeNi ohmic contact to n-type GaAs
|
Bruce, R.A.
|
|
1987
|
30 |
7 |
p. 729-737
9 p.
|
artikel
|
| 5 |
Boundary conditions and current-voltage relations for heavily doped p-n diodes
|
Mohammad, S.Noor
|
|
1987
|
30 |
7 |
p. 713-718
6 p.
|
artikel
|
| 6 |
Conference report
|
Van Vliet, Carolyn M.
|
|
1987
|
30 |
7 |
p. 777-778
2 p.
|
artikel
|
| 7 |
Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field
|
Omar, M.Ali
|
|
1987
|
30 |
7 |
p. 693-697
5 p.
|
artikel
|
| 8 |
Editorial - software survey section
|
|
|
1987
|
30 |
7 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Electrical properties at the Nd-doped SiSiO2 interface
|
Zhang, T.J.
|
|
1987
|
30 |
7 |
p. 775-776
2 p.
|
artikel
|
| 10 |
Emitter efficiency, transit times and current gain of bipolar transistors
|
Mohammad, S.Noor
|
|
1987
|
30 |
7 |
p. 685-692
8 p.
|
artikel
|
| 11 |
Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion process
|
Ledakovitch, P.J.
|
|
1987
|
30 |
7 |
p. 681-684
4 p.
|
artikel
|
| 12 |
High-frequency response of microwave transistors
|
van der Ziel, A.
|
|
1987
|
30 |
7 |
p. 771-772
2 p.
|
artikel
|
| 13 |
Hubbard's sub-band conduction in Si poly-SiO2 transition layers
|
Ada-Hanifi, M.
|
|
1987
|
30 |
7 |
p. 765-769
5 p.
|
artikel
|
| 14 |
Interface states under LOCOS bird's beak region
|
Marchetaux, J.-C.
|
|
1987
|
30 |
7 |
p. 745-753
9 p.
|
artikel
|
| 15 |
Minority-carrier accumulation at the base edge of a junction space-charge region under short-circuit conditions
|
Misiakos, Konstantinos
|
|
1987
|
30 |
7 |
p. 755-758
4 p.
|
artikel
|
| 16 |
Modelling of a depletion-mode MOSFET
|
Parikh, C.D.
|
|
1987
|
30 |
7 |
p. 699-703
5 p.
|
artikel
|
| 17 |
Optical characteristics of a superlattice avalanche photodiode
|
Chakrabarti, P.
|
|
1987
|
30 |
7 |
p. 675-679
5 p.
|
artikel
|
| 18 |
Theoretical analysis of charge transfer in thin-film charge-coupled devices
|
Chen, Inan
|
|
1987
|
30 |
7 |
p. 759-763
5 p.
|
artikel
|
| 19 |
Transient type-inversion of semi-insulating GaAs under strong illumination at 140 K detected by the nondestructive surface-acoustic-wave technique
|
Tabib-Azar, M.
|
|
1987
|
30 |
7 |
p. 705-711
7 p.
|
artikel
|
| 20 |
Transition from Schottky barriers to p-n junctions
|
Wong, W.C.
|
|
1987
|
30 |
7 |
p. 719-722
4 p.
|
artikel
|
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