| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modeling of an ion-implanted MESFET
|
Chattopadhyay, S.N.
|
|
1987
|
30 |
4 |
p. 391-396
6 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1987
|
30 |
4 |
p. i-
1 p.
|
artikel
|
| 3 |
Application of two-dimensional process/device simulation for evaluating MOSFET fabrication processes
|
Tazawa, Satoshi
|
|
1987
|
30 |
4 |
p. 375-381
7 p.
|
artikel
|
| 4 |
A simple interfacial-layer model for the nonideal I-V and C-V characteristics of the Schottky-barrier diode
|
Tseng, Hsun-Hua
|
|
1987
|
30 |
4 |
p. 383-390
8 p.
|
artikel
|
| 5 |
A simple self-aligned GaAs MESFET using polyimide
|
Abdel-Motaleb, I.
|
|
1987
|
30 |
4 |
p. 361-363
3 p.
|
artikel
|
| 6 |
Boundary value problems in Boltzmann modelling of hot electron transport
|
Cox, W.
|
|
1987
|
30 |
4 |
p. 365-374
10 p.
|
artikel
|
| 7 |
Editorial-software survey section
|
Crawford Dunlap, W.
|
|
1987
|
30 |
4 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Extraction of interface state attributes from MOS conductance measurements
|
Noras, James M.
|
|
1987
|
30 |
4 |
p. 433-437
5 p.
|
artikel
|
| 9 |
GaAs inverted common drain logic (ICDL) and its performance compared with other GaAs logic families
|
Abdel-Motaleb, Ibrahim M.
|
|
1987
|
30 |
4 |
p. 403-414
12 p.
|
artikel
|
| 10 |
High efficiency, large-area p +-n-n + silicon solar cells
|
Silard, Andrei
|
|
1987
|
30 |
4 |
p. 397-401
5 p.
|
artikel
|
| 11 |
Lifetime determination in p/n junction diodes and solar cells from open-circuit-voltage decay including junction capacitance effects
|
Liou, J.J.
|
|
1987
|
30 |
4 |
p. 457-462
6 p.
|
artikel
|
| 12 |
Noise behavior of a static induction transistor between 77 K and 300 K
|
Gustafsson, Staffan
|
|
1987
|
30 |
4 |
p. 439-443
5 p.
|
artikel
|
| 13 |
Reverse bias voltage decay and measurement of the dark current in semiconductor radiation detectors
|
Totterdell, D.H.J.
|
|
1987
|
30 |
4 |
p. 425-431
7 p.
|
artikel
|
| 14 |
Spectral dependence of 1 ƒγ noise on gate bias in n-MOSFETS
|
Celik-Butler, Z.
|
|
1987
|
30 |
4 |
p. 419-423
5 p.
|
artikel
|
| 15 |
Suppression of copper-related level in LEC pGaAs by platinum diffusion
|
Fang, Z.Q.
|
|
1987
|
30 |
4 |
p. 415-417
3 p.
|
artikel
|
| 16 |
Two-dimensional modeling of ion implantation with spatial moments
|
Hobler, G.
|
|
1987
|
30 |
4 |
p. 445-455
11 p.
|
artikel
|
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