| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous-crystalline silicon anisotype heterojunctions: Built-in potential, its distribution and depletion widths
|
Rubinelli, F.A.
|
|
1987
|
30 |
3 |
p. 345-351
7 p.
|
artikel
|
| 2 |
Amorphous-crystalline silicon heterojunction: Theoretical studies of the dark current and spectral response
|
Rubinelli, Francisco A.
|
|
1987
|
30 |
3 |
p. 273-279
7 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1987
|
30 |
3 |
p. i-
1 p.
|
artikel
|
| 4 |
An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide
|
Pande, K.P.
|
|
1987
|
30 |
3 |
p. 253-258
6 p.
|
artikel
|
| 5 |
A tunable, current-controlled, light-emitting diode
|
Manifacier, J.C.
|
|
1987
|
30 |
3 |
p. 354-357
4 p.
|
artikel
|
| 6 |
Characterization of aluminum/LPCVD polysilicon Schottky barrier diodes
|
Chen, Dao-Long
|
|
1987
|
30 |
3 |
p. 339-343
5 p.
|
artikel
|
| 7 |
Characterization of charge injection and trapping in scaled SONOS/MONOS memory devices
|
Chao, Chen-Chung
|
|
1987
|
30 |
3 |
p. 307-319
13 p.
|
artikel
|
| 8 |
Editorial - Software survey section
|
|
|
1987
|
30 |
3 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Effect of a high-low junction on solar cell emitter recombination current
|
Furlan, Jože
|
|
1987
|
30 |
3 |
p. 289-293
5 p.
|
artikel
|
| 10 |
Impact of edge effects on charge-packet-splitting accuracy
|
Bencuya, Selim S.
|
|
1987
|
30 |
3 |
p. 299-305
7 p.
|
artikel
|
| 11 |
Influence of series resistance and internal capacitance on the forward voltage decay in a p-n junction
|
Fortini, A.
|
|
1987
|
30 |
3 |
p. 357-360
4 p.
|
artikel
|
| 12 |
Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures
|
Balestra, F.
|
|
1987
|
30 |
3 |
p. 321-327
7 p.
|
artikel
|
| 13 |
Low frequency noise measurements as a tool to analyze deep-level impurities in semiconductor devices
|
van Rheenen, A.D.
|
|
1987
|
30 |
3 |
p. 259-265
7 p.
|
artikel
|
| 14 |
On the surface electric field of junction diodes with a tapered window
|
Choi, Yearn-Ik
|
|
1987
|
30 |
3 |
p. 353-354
2 p.
|
artikel
|
| 15 |
Optically-controlled switching characteristics of silicon MESFETs
|
Singh, V.K.
|
|
1987
|
30 |
3 |
p. 267-272
6 p.
|
artikel
|
| 16 |
Optimization of maximum oscillation frequency of a bipolar transistor
|
Roulston, D.J.
|
|
1987
|
30 |
3 |
p. 281-282
2 p.
|
artikel
|
| 17 |
Procedure for determination of a linear approximation doping profile in a MOS structure
|
Iniewski, Krzysztof
|
|
1987
|
30 |
3 |
p. 295-298
4 p.
|
artikel
|
| 18 |
Relaxation of trapped charge at silicon grain boundary states
|
Ling, C.H.
|
|
1987
|
30 |
3 |
p. 247-252
6 p.
|
artikel
|
| 19 |
Solar cells in bulk InP, made by an open tube diffusion process
|
Parat, K.K.
|
|
1987
|
30 |
3 |
p. 283-287
5 p.
|
artikel
|
| 20 |
The application of radioanalytical methods in semiconductor technology
|
Haas, E.W.
|
|
1987
|
30 |
3 |
p. 329-337
9 p.
|
artikel
|
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