| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the quasi-saturation region of high voltage VDMOS devices
|
Rebollo, J.
|
|
1987
|
30 |
2 |
p. 177-180
4 p.
|
artikel
|
| 2 |
Analysis of the transferred-electron effect in the InGaAsP system
|
Kowalsky, W.
|
|
1987
|
30 |
2 |
p. 161-172
12 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1987
|
30 |
2 |
p. i-
1 p.
|
artikel
|
| 4 |
A note on the equality of bulk and inversion-layer capacitance at threshold
|
Warner Jr, R.M.
|
|
1987
|
30 |
2 |
p. 181-183
3 p.
|
artikel
|
| 5 |
Comments on the collective and corpuscular approach of generation-recombination noise in a p-n junction
|
Dabrowski, Władysław
|
|
1987
|
30 |
2 |
p. 205-208
4 p.
|
artikel
|
| 6 |
Comments on van der Ziel's “a generalized expression for diffusion noise and hot-electron noise at arbitrary drift velocities”
|
Reggiani, Lino
|
|
1987
|
30 |
2 |
p. 246-
1 p.
|
artikel
|
| 7 |
Editorial - software survey section
|
|
|
1987
|
30 |
2 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Effective masses and evidence for alloy disorder effects in GaxIn1−xAsyP1−y investigated by shallow donor photoconductivity
|
Chamberlain, J.M.
|
|
1987
|
30 |
2 |
p. 217-220
4 p.
|
artikel
|
| 9 |
Effects of surface states on steady-state photoresponse of thin semiconductor film under subbandgap illumination
|
Szaro, L.
|
|
1987
|
30 |
2 |
p. 242-246
5 p.
|
artikel
|
| 10 |
End region recombination and boundary determined current density in PIN diodes
|
McGhee, J.
|
|
1987
|
30 |
2 |
p. 241-
1 p.
|
artikel
|
| 11 |
High-field autocovariance coefficient, diffusion coefficient and noise in InGaAs at 300 K
|
Nag, B.R.
|
|
1987
|
30 |
2 |
p. 235-239
5 p.
|
artikel
|
| 12 |
Implantation gettering in silicon
|
Gong, S.S.
|
|
1987
|
30 |
2 |
p. 209-211
3 p.
|
artikel
|
| 13 |
Large-signal behaviour of double-avalanche-region IMPATT diodes
|
Chakrabarti, P.
|
|
1987
|
30 |
2 |
p. 147-154
8 p.
|
artikel
|
| 14 |
Morphology and defect study in low pressure MOCVD grown AlGaAs
|
Chen, L.P.
|
|
1987
|
30 |
2 |
p. 189-193
5 p.
|
artikel
|
| 15 |
Non-destructive lifetime measurement in silicon wafers by microwave reflection
|
Borrego, J.M.
|
|
1987
|
30 |
2 |
p. 195-203
9 p.
|
artikel
|
| 16 |
Observation of bias-dependent capture-emission processes in MBE-grown GaAs layers
|
Hsu, W.C.
|
|
1987
|
30 |
2 |
p. 221-226
6 p.
|
artikel
|
| 17 |
Optimization of n + self-aligned short-channel normally-off GaAs MESFETs by two-dimensional numerical device simulation
|
Passlack, M.
|
|
1987
|
30 |
2 |
p. 139-146
8 p.
|
artikel
|
| 18 |
Properties of amorphous CdS-crystalline Si junctions
|
Nesheva, D.
|
|
1987
|
30 |
2 |
p. 173-176
4 p.
|
artikel
|
| 19 |
Spectral mismatch correction for GaAs solar cells with varying junction depths
|
Emery, K.A.
|
|
1987
|
30 |
2 |
p. 213-215
3 p.
|
artikel
|
| 20 |
Study of a buried sin+P homojunction solar cell
|
Roy, S.B.
|
|
1987
|
30 |
2 |
p. 155-159
5 p.
|
artikel
|
| 21 |
Supplementary remarks on “a generalized expression for diffusion noise and hot-electron noise at arbitrary drift velocities”
|
van der Ziel, A.
|
|
1987
|
30 |
2 |
p. 246-
1 p.
|
artikel
|
| 22 |
Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation
|
Mogro-Campero, A.
|
|
1987
|
30 |
2 |
p. 185-188
4 p.
|
artikel
|
| 23 |
The electrical properties of Hg-sensitized “photox”-oxide layers deposited at 80°C
|
Shacham-Diamand, Y.
|
|
1987
|
30 |
2 |
p. 227-233
7 p.
|
artikel
|
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