| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the current-voltage characteristic of solar cells
|
Fuchs, D.
|
|
1986
|
29 |
8 |
p. 791-795
5 p.
|
artikel
|
| 2 |
A technique for modelling p-n junction depletion capacitance of multiple doping regions in integrated circuits
|
Pinkham, Raymond
|
|
1986
|
29 |
8 |
p. 773-777
5 p.
|
artikel
|
| 3 |
Current-voltage characteristics of proton-bombarded AuGaAs contacts
|
Ejimanya, J.I.
|
|
1986
|
29 |
8 |
p. 841-844
4 p.
|
artikel
|
| 4 |
Defect structure and generation of interface states in MOS structures
|
Do Thanh, L.
|
|
1986
|
29 |
8 |
p. 829-840
12 p.
|
artikel
|
| 5 |
Editorial — Software survey section
|
|
|
1986
|
29 |
8 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
|
Bleichner, H.
|
|
1986
|
29 |
8 |
p. 779-786
8 p.
|
artikel
|
| 7 |
Lateral motion of the inversion layer of MOS structures in regions of variable doping density and oxide thickness
|
Hawkins, G.A.
|
|
1986
|
29 |
8 |
p. 815-823
9 p.
|
artikel
|
| 8 |
MESFET fabrication and hall mobility measurements in LPE-grown InxGa1−xP layers lattice-matched to GaAs
|
Johnson, R.H.
|
|
1986
|
29 |
8 |
p. 825-828
4 p.
|
artikel
|
| 9 |
On the temperature coefficient of the MOSFET threshold voltage
|
Klaassen, F.M.
|
|
1986
|
29 |
8 |
p. 787-789
3 p.
|
artikel
|
| 10 |
Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique
|
Haddara, H.
|
|
1986
|
29 |
8 |
p. 767-772
6 p.
|
artikel
|
| 11 |
Relationship between short channel behavior and long term stability of n-channel enhancement and depletion MOSFETs
|
Bauer, F.
|
|
1986
|
29 |
8 |
p. 797-806
10 p.
|
artikel
|
| 12 |
The role of the device surface in the high voltage behaviour of the GaAs MESFET
|
Barton, T.M.
|
|
1986
|
29 |
8 |
p. 807-813
7 p.
|
artikel
|
Tijdschrift beschrijving