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Journal description
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Details for article 2 of 12 found articles
| Title: |
A technique for modelling p-n junction depletion capacitance of multiple doping regions in integrated circuits |
| Author: |
Pinkham, Raymond Anderson, Daniel F. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 29 (1986) nr. 8 pages 5 p. |
| Year: |
1986 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 12 found articles
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