| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
|
Morante, J.R.
|
|
1986
|
29 |
7 |
p. 759-766
8 p.
|
article
|
| 2 |
An isolated Al-poly Si-(p)Si-(n +)Si switching device
|
Chang, C.Y.
|
|
1986
|
29 |
7 |
p. 735-737
3 p.
|
article
|
| 3 |
Distribution of 1/ƒ noise in an epitaxial GaAs MESFET
|
Hashiguchi, S.
|
|
1986
|
29 |
7 |
p. 745-749
5 p.
|
article
|
| 4 |
Editorial — Software survey section
|
|
|
1986
|
29 |
7 |
p. I-III
nvt p.
|
article
|
| 5 |
Equal areas rules for filamentation in SNDC elements
|
Schöll, Eckehard
|
|
1986
|
29 |
7 |
p. 687-695
9 p.
|
article
|
| 6 |
Modelling the d.c. performance of GaAs homojunction bipolar transistors
|
Lee, S.-P.
|
|
1986
|
29 |
7 |
p. 713-723
11 p.
|
article
|
| 7 |
Near-surface effects of gold in silicon
|
Mogro-Campero, A.
|
|
1986
|
29 |
7 |
p. 703-706
4 p.
|
article
|
| 8 |
On the effects of implantation of ions in the MeV energy range into silicon
|
Wang, L.K.
|
|
1986
|
29 |
7 |
p. 739-743
5 p.
|
article
|
| 9 |
Optically controlled characteristics in an ion-implanted silicon MESFET
|
Singh, V.K.
|
|
1986
|
29 |
7 |
p. 707-711
5 p.
|
article
|
| 10 |
Optically induced inversion in the MIS solar cell
|
Abdou, Ali A.
|
|
1986
|
29 |
7 |
p. 751-758
8 p.
|
article
|
| 11 |
Potential probing of a thyristor cross-cut during turn-on
|
Voss, P.
|
|
1986
|
29 |
7 |
p. 697-701
5 p.
|
article
|
| 12 |
The effects of heavy doping on I–V characteristics of GaAs JFET and MESFET devices
|
Teng, K.W.
|
|
1986
|
29 |
7 |
p. 683-686
4 p.
|
article
|
| 13 |
Transient transport in central-valley-dominated ternary III–V alloys
|
Massengill, L.W.
|
|
1986
|
29 |
7 |
p. 725-734
10 p.
|
article
|
Journal description