| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A simple model for the MOS transistor in saturation
|
El Nokali, M.
|
|
1986
|
29 |
6 |
p. 591-596
6 p.
|
article
|
| 2 |
A simplified model for the static characteristics of amorphous silicon thin-film transistors
|
Neudeck, G.W.
|
|
1986
|
29 |
6 |
p. 639-645
7 p.
|
article
|
| 3 |
Effects of varying the processing parameters on the interface-state density and retention characteristics of an MNOS capacitor
|
de Almeida, A.M.
|
|
1986
|
29 |
6 |
p. 619-624
6 p.
|
article
|
| 4 |
Electroless deposition as a means of obtaining ohmic contacts: Au/Pd onto GaAs
|
Lamouche, D.
|
|
1986
|
29 |
6 |
p. 625-632
8 p.
|
article
|
| 5 |
Experimental and theoretical evaluation of boron diffused high-low junctions for BSF solar cells
|
Girisch, R.
|
|
1986
|
29 |
6 |
p. 667-676
10 p.
|
article
|
| 6 |
High-voltage multiple-resistivity drift-region LDMOS
|
Mena, Jóse G.
|
|
1986
|
29 |
6 |
p. 647-656
10 p.
|
article
|
| 7 |
Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures
|
Jain, Sanjay
|
|
1986
|
29 |
6 |
p. 597-606
10 p.
|
article
|
| 8 |
On 1 f noise in RuO2-based thick resistive films
|
Kusy, Andrzej
|
|
1986
|
29 |
6 |
p. 657-665
9 p.
|
article
|
| 9 |
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
|
Song, Y.P.
|
|
1986
|
29 |
6 |
p. 633-638
6 p.
|
article
|
| 10 |
Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions
|
Tarnay, K.
|
|
1986
|
29 |
6 |
p. 613-617
5 p.
|
article
|
| 11 |
Schottky diode analysis for evaluation of RIE effects on silicon surfaces
|
Spirito, P.
|
|
1986
|
29 |
6 |
p. 607-611
5 p.
|
article
|
| 12 |
Software survey section
|
|
|
1986
|
29 |
6 |
p. I-IV
nvt p.
|
article
|
| 13 |
Susceptibility of on-chip protection circuits to latent failures caused by electrostatic discharges
|
Neelakantaswamy, P.S.
|
|
1986
|
29 |
6 |
p. 677-679
3 p.
|
article
|
Journal description