| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of extraction methods for solar cell model parameters
|
Chan, D.S.H.
|
|
1986
|
29 |
3 |
p. 329-337
9 p.
|
artikel
|
| 2 |
Ambipolar field-effect transistor
|
Pfleiderer, Hans
|
|
1986
|
29 |
3 |
p. 317-319
3 p.
|
artikel
|
| 3 |
An explanation of the asymmetry in electron and hole tunnel currents through ultra-thin SiO2 films
|
O'Neill, A.G.
|
|
1986
|
29 |
3 |
p. 305-310
6 p.
|
artikel
|
| 4 |
Combined process modeling and subthreshold device simulation
|
Klose, Helmut
|
|
1986
|
29 |
3 |
p. 371-375
5 p.
|
artikel
|
| 5 |
Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN—A tunnel emitter transistor—And to the MIS switching device
|
Simmons, J.G.
|
|
1986
|
29 |
3 |
p. 287-303
17 p.
|
artikel
|
| 6 |
Current gain of narrow-base transistors
|
Sukulal, K.
|
|
1986
|
29 |
3 |
p. 311-316
6 p.
|
artikel
|
| 7 |
Editorial—Software survey section
|
|
|
1986
|
29 |
3 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Electron surface trapping effects on the switching voltage of metal-insulator (tunnel)-Si(n)-Si(p +) devices
|
Phan, H.K.
|
|
1986
|
29 |
3 |
p. 273-277
5 p.
|
artikel
|
| 9 |
Half-implicit difference scheme for numerical simulation of transient processes in semiconductor devices
|
Polsky, B.S.
|
|
1986
|
29 |
3 |
p. 321-328
8 p.
|
artikel
|
| 10 |
High-current, low-forward-drop JBS power rectifiers
|
Chang, H.-R.
|
|
1986
|
29 |
3 |
p. 359-363
5 p.
|
artikel
|
| 11 |
Induced-gate 1 f noise in MODFETs in the low GHz range
|
Pawlikiewicz, A.
|
|
1986
|
29 |
3 |
p. 379-380
2 p.
|
artikel
|
| 12 |
Interaction of Au/Zn/Au sandwich contact layers with AIIIBV compound semiconductors
|
Kamińska, E.
|
|
1986
|
29 |
3 |
p. 279-286
8 p.
|
artikel
|
| 13 |
Minority carrier injection in Pt-Si/Si Schottky barrier diodes
|
Hargrove, Michael J.
|
|
1986
|
29 |
3 |
p. 365-369
5 p.
|
artikel
|
| 14 |
On the minority-carrier quasi-Fermi level in metal-oxide-semiconductor tunnel structures
|
Chang, C.Y.
|
|
1986
|
29 |
3 |
p. 339-353
15 p.
|
artikel
|
| 15 |
Transistor action in polysilicon insulator transistor (SIT)
|
Castillo, U.
|
|
1986
|
29 |
3 |
p. 377-379
3 p.
|
artikel
|
| 16 |
Tunneling in a metal-semiconductor-semiconductor thin-film diode
|
Yang, E.S.
|
|
1986
|
29 |
3 |
p. 355-357
3 p.
|
artikel
|
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