nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An AlGaAs-GaAs dual-wavelength photodetector with 500 Å resolution
|
Lee, S.C. |
|
1984 |
27 |
10 |
p. 917-919 3 p. |
artikel |
2 |
A write-operation model for the FCAT-II-A 50 NS at 15 V alterable nonvolatile memory
|
Horiuchi, Masatada |
|
1984 |
27 |
10 |
p. 849-854 6 p. |
artikel |
3 |
Comparison of theoretical and empirical lifetimes for minority carriers in heavily doped silicon
|
Bennett, Herbert S. |
|
1984 |
27 |
10 |
p. 893-897 5 p. |
artikel |
4 |
Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime
|
Lakhani, Amir A. |
|
1984 |
27 |
10 |
p. 921-924 4 p. |
artikel |
5 |
Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions
|
von Roos, Oldwig |
|
1984 |
27 |
10 |
p. 913-915 3 p. |
artikel |
6 |
Equivalent circuits for transients in p-n junctions and solar cells with their application to methods for minority carrier life-time measurements
|
Dhariwal, S.R. |
|
1984 |
27 |
10 |
p. 837-847 11 p. |
artikel |
7 |
Erratum
|
|
|
1984 |
27 |
10 |
p. 927- 1 p. |
artikel |
8 |
Fast alloying technique for improved ohmic contacts to n-GaAs
|
Mojzes, I. |
|
1984 |
27 |
10 |
p. 925-926 2 p. |
artikel |
9 |
Investigations of metal-insulator-semiconductor structure inhomogeneities using a small-size mercury probe
|
Nakhmanson, R.S. |
|
1984 |
27 |
10 |
p. 881-891 11 p. |
artikel |
10 |
Modeling the inversion layer at equilibrium
|
Ju, D.-H. |
|
1984 |
27 |
10 |
p. 907-911 5 p. |
artikel |
11 |
Modelling of write/erase and charge retention characteristics of floating gate EEPROM devices
|
Bhattacharyya, Anjan |
|
1984 |
27 |
10 |
p. 899-906 8 p. |
artikel |
12 |
Publisher's notice to authors and subscribers
|
|
|
1984 |
27 |
10 |
p. i- 1 p. |
artikel |
13 |
Software Survey Section:SOLAR CELLS
|
|
|
1984 |
27 |
10 |
p. I-III nvt p. |
artikel |
14 |
Space-charge behavior of “Thin-MOS” diodes with MBE-grown silicon films
|
Lieneweg, Udo |
|
1984 |
27 |
10 |
p. 867-880 14 p. |
artikel |
15 |
The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode
|
Djurić, Z. |
|
1984 |
27 |
10 |
p. 833-835 3 p. |
artikel |
16 |
Voltage-controlled negative resistance in a submicron vertical JFET
|
Tamama, Teruo |
|
1984 |
27 |
10 |
p. 855-866 12 p. |
artikel |