| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complete analytic model for the base and collector current in lateral p-n-p transistors
|
Eltoukhy, A.A.
|
|
1984
|
27 |
1 |
p. 69-75
7 p.
|
artikel
|
| 2 |
An analytical method for determining intrinsic drain/source resistance of lightly doped drain (LDD) devices
|
Duvvury, Charvaka
|
|
1984
|
27 |
1 |
p. 89-96
8 p.
|
artikel
|
| 3 |
Autocorrelation measurements of CdS x Se1-x thin film noise
|
Filiač, V.
|
|
1984
|
27 |
1 |
p. 27-32
6 p.
|
artikel
|
| 4 |
Carrier mobility in inversion layers and rf plasma induced radiation defects at the SiSiO2 interface
|
Kassabov, J.
|
|
1984
|
27 |
1 |
p. 13-19
7 p.
|
artikel
|
| 5 |
Comment on W.W. Anderson's “dielectric relaxation contribution to dispersion of junction admittance”
|
de Visschere, P.
|
|
1984
|
27 |
1 |
p. 109-111
3 p.
|
artikel
|
| 6 |
Computer analysis on the collection of alpha-generated charge for reflecting and absorbing surface conditions around the collector
|
Terrill, K.
|
|
1984
|
27 |
1 |
p. 45-52
8 p.
|
artikel
|
| 7 |
Current multiplication in MIS structures
|
Chein Wei Jen,
|
|
1984
|
27 |
1 |
p. 1-11
11 p.
|
artikel
|
| 8 |
Current transport mechanisms of electrochemically deposited CdS/CdTe heterojunction
|
Ou, S.S.
|
|
1984
|
27 |
1 |
p. 21-25
5 p.
|
artikel
|
| 9 |
Diffusion length and surface recombination velocity measurements with the scanning electron microscope: The highly-doped emitter of a p-n junction
|
Burk, D.E.
|
|
1984
|
27 |
1 |
p. 59-67
9 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
1984
|
27 |
1 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Influence of anneal temperature on the mobile ion concentration in MOS structures
|
Greeuw, G.
|
|
1984
|
27 |
1 |
p. 77-81
5 p.
|
artikel
|
| 12 |
Orientation dependence of avalanche breakdown voltage in GaAs with nonuniform doping profiles
|
Shenai, K.
|
|
1984
|
27 |
1 |
p. 107-108
2 p.
|
artikel
|
| 13 |
The electrical properties of zinc implanted GaAs
|
Kular, S.S.
|
|
1984
|
27 |
1 |
p. 83-88
6 p.
|
artikel
|
| 14 |
Theory of the surface depletion region for semiconductors with linearly graded impurity profiles
|
Tarasewicz, S.W.
|
|
1984
|
27 |
1 |
p. 33-43
11 p.
|
artikel
|
| 15 |
The theory of the long-channel MOSFET
|
Nussbaum, Allen
|
|
1984
|
27 |
1 |
p. 97-106
10 p.
|
artikel
|
| 16 |
Tunneling of holes from acceptor levels in an applied field
|
Nie, Hui-Quan
|
|
1984
|
27 |
1 |
p. 53-58
6 p.
|
artikel
|
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