| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An operational method to model carrier degeneracy and band gap narrowing
|
Adler, M.S.
|
|
1983
|
26 |
5 |
p. 387-396
10 p.
|
artikel
|
| 2 |
A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode
|
Bellone, Salvatore
|
|
1983
|
26 |
5 |
p. 403-413
11 p.
|
artikel
|
| 3 |
Calculation of activity coefficients of conduction electrons in metals and in semiconductors
|
Guy, A.G.
|
|
1983
|
26 |
5 |
p. 433-436
4 p.
|
artikel
|
| 4 |
Charge loss in metal-nitride-oxide-semiconductor (MNOS) devices at high temperatures
|
Dobbs, C.S.
|
|
1983
|
26 |
5 |
p. 427-432
6 p.
|
artikel
|
| 5 |
Dark-capacitance transients in MIS tunnel diodes
|
Dahlke, Walter E.
|
|
1983
|
26 |
5 |
p. 465-472
8 p.
|
artikel
|
| 6 |
Dependence of the threshold voltage on channel length in BC-mosfet's
|
Schmidt, Pierre E.
|
|
1983
|
26 |
5 |
p. 397-401
5 p.
|
artikel
|
| 7 |
Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters
|
Soerowirdjo, B.
|
|
1983
|
26 |
5 |
p. 495-498
4 p.
|
artikel
|
| 8 |
Electrical characterization of Al-SiO2-Si (N-type) tunnel structures. Influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface
|
Pananakakis, G.
|
|
1983
|
26 |
5 |
p. 415-426
12 p.
|
artikel
|
| 9 |
1/f noise in HEMT-type GaAs FETs at low drain bias
|
van der Ziel, A.
|
|
1983
|
26 |
5 |
p. 385-386
2 p.
|
artikel
|
| 10 |
Noise in near-ballistic n + nn + and n + pn + gallium arsenide submicron diodes
|
Schmidt, R.R.
|
|
1983
|
26 |
5 |
p. 437-444
8 p.
|
artikel
|
| 11 |
Photovoltaic measurement of bandgap narrowing in moderately doped silicon
|
del Alamo, Jesus A.
|
|
1983
|
26 |
5 |
p. 483-489
7 p.
|
artikel
|
| 12 |
Schottky diodes with high breakdown voltages
|
Wilamowski, Bodgan M.
|
|
1983
|
26 |
5 |
p. 491-493
3 p.
|
artikel
|
| 13 |
Temperature-ramp resistance analysis to characterize electromigration
|
Pasco, R.W.
|
|
1983
|
26 |
5 |
p. 445-452
8 p.
|
artikel
|
| 14 |
The base current recombining at the oxidized silicon surface
|
Hillen, M.W.
|
|
1983
|
26 |
5 |
p. 453-463
11 p.
|
artikel
|
| 15 |
The effect of the minority carrier distribution on the threshold voltage of a MOSFET
|
Wu, Chung-Yu
|
|
1983
|
26 |
5 |
p. 371-381
11 p.
|
artikel
|
| 16 |
The influence of heavy doping effects on the reverse recovery storage time of a diode
|
Jain, S.C.
|
|
1983
|
26 |
5 |
p. 473-481
9 p.
|
artikel
|
| 17 |
Thermal noise in high electron mobility transistors
|
van der Ziel, A.
|
|
1983
|
26 |
5 |
p. 383-384
2 p.
|
artikel
|
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