| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous BN films produced in a double-plasma reactor for semiconductor applications
|
Schmolla, W.
|
|
1983
|
26 |
10 |
p. 931-939
9 p.
|
artikel
|
| 2 |
Analysis of the dark current and photoresponse of In0.53Ga0.47As/InP avalanche photodiodes
|
Forrest, S.R.
|
|
1983
|
26 |
10 |
p. 951-968
18 p.
|
artikel
|
| 3 |
A normalized analytical solution for the capacitance associated with uniformly doped semiconductors at equilibrium
|
Jindal, R.P.
|
|
1983
|
26 |
10 |
p. 1005-1008
4 p.
|
artikel
|
| 4 |
A re-examination of practical performance limits of scaled n-channel and ϱ-channel MOS devices for VLSI
|
Shichijo, Hisashi
|
|
1983
|
26 |
10 |
p. 969-986
18 p.
|
artikel
|
| 5 |
Field-controlled thyristor turn-on as the moment of losing stability
|
Gorbatjuk, A.V.
|
|
1983
|
26 |
10 |
p. 991-992
2 p.
|
artikel
|
| 6 |
Lifetime and drift velocity analysis for electromigration in sputtered Al films, multilayers, and alloys
|
Grabe, B.
|
|
1983
|
26 |
10 |
p. 1023-1032
10 p.
|
artikel
|
| 7 |
Multiplication noise in multi-heterostructure avalanche photodiodes
|
Rakshit, S.
|
|
1983
|
26 |
10 |
p. 999-1003
5 p.
|
artikel
|
| 8 |
1/ƒ noise in diffused and ion-implanted MOS capacitors
|
Amberiadis, Kostas
|
|
1983
|
26 |
10 |
p. 1009-1016
8 p.
|
artikel
|
| 9 |
On the small-signal behaviour of the MOS transistor in quasistatic operation
|
Turchetti, Claudio
|
|
1983
|
26 |
10 |
p. 941-948
8 p.
|
artikel
|
| 10 |
Properties of inversion layers for MIS/IL solar cells studied on low-temperature-processed MNOS transistors
|
Hezel, R.
|
|
1983
|
26 |
10 |
p. 993-997
5 p.
|
artikel
|
| 11 |
Proton bombardment in n- and p-type Ga0.47In0.53As
|
Kräutle, H.
|
|
1983
|
26 |
10 |
p. 1033-1037
5 p.
|
artikel
|
| 12 |
The mobility of a nickel-related centre in reverse biased germanium n + p diodes
|
Pearton, S.J.
|
|
1983
|
26 |
10 |
p. 1019-1021
3 p.
|
artikel
|
| 13 |
The width of the non-steady state transition region in deep level impurity measurements
|
Brotherton, S.D.
|
|
1983
|
26 |
10 |
p. 987-990
4 p.
|
artikel
|
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