| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
CMOS circuit optimization
|
Kanuma, Akira
|
|
1983
|
26 |
1 |
p. 47-58
12 p.
|
artikel
|
| 2 |
Common anion heterojunctions: CdTe-CdHgTe
|
Migliorato, P.
|
|
1983
|
26 |
1 |
p. 65-69
5 p.
|
artikel
|
| 3 |
Computer analysis of the significance of surface boundary conditions on the collection of α-induced charge
|
Terrilli, K.W.
|
|
1983
|
26 |
1 |
p. 15-18
4 p.
|
artikel
|
| 4 |
Copper impurity levels in silicon
|
Tōyama, Naotake
|
|
1983
|
26 |
1 |
p. 37-46
10 p.
|
artikel
|
| 5 |
Determination of the oxygen precipitate-free zone width in silicon wafers from surface photovoltage measurements
|
Chappell, Terry I.
|
|
1983
|
26 |
1 |
p. 33-36
4 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
1983
|
26 |
1 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Ion implantation of GaAs integrated circuits
|
Livingstone, A.W.
|
|
1983
|
26 |
1 |
p. 19-24
6 p.
|
artikel
|
| 8 |
Presence of mobility-fluctuation 1 f noise identified in silicon P + NP transistors
|
Kilmer, J.
|
|
1983
|
26 |
1 |
p. 71-74
4 p.
|
artikel
|
| 9 |
Proper choice of the measuring frequency for determining f T of bipolar transistors
|
Rein, H.-M.
|
|
1983
|
26 |
1 |
p. 75-82
8 p.
|
artikel
|
| 10 |
Theory for nonequilibrium behavior of anisotype graded heterojunctions
|
Chatterjee, Amitava
|
|
1983
|
26 |
1 |
p. 59-64
6 p.
|
artikel
|
| 11 |
Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon
|
Morante, J.R.
|
|
1983
|
26 |
1 |
p. 1-6
6 p.
|
artikel
|
| 12 |
The role of germanium in evaporated AuGe ohmic contacts to GaAs
|
Iliadis, A.
|
|
1983
|
26 |
1 |
p. 7-14
8 p.
|
artikel
|
| 13 |
Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding mos structures
|
Fang, R.C.Y.
|
|
1983
|
26 |
1 |
p. 25-32
8 p.
|
artikel
|
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