| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An efficient method for the analysis of the space-charge region of diffused junctions
|
Eltoukhy, A.A.
|
|
1982
|
25 |
8 |
p. 829-831
3 p.
|
article
|
| 2 |
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon
|
Fossum, J.G.
|
|
1982
|
25 |
8 |
p. 741-747
7 p.
|
article
|
| 3 |
Carbon in silicon: Properties and impact on devices
|
Kolbesen, B.O.
|
|
1982
|
25 |
8 |
p. 759-775
17 p.
|
article
|
| 4 |
Comments on zero-point energy, quantum noise and spontaneous-emission noise
|
Grau, G.
|
|
1982
|
25 |
8 |
p. 749-751
3 p.
|
article
|
| 5 |
Correction of the temperature effect on the solar cell I sc − V oc characteristic
|
Sánchez, E.
|
|
1982
|
25 |
8 |
p. 817-819
3 p.
|
article
|
| 6 |
Double-implanted subvolt JFETs
|
Malhi, Satwinder D.S.
|
|
1982
|
25 |
8 |
p. 791-795
5 p.
|
article
|
| 7 |
Effect of linear emitter recombination on OCVD determination of lifetime in p-i-n diodes
|
Berz, F.
|
|
1982
|
25 |
8 |
p. 693-697
5 p.
|
article
|
| 8 |
High injection phenomena in p + in + silicon solar cells
|
Luque, A.
|
|
1982
|
25 |
8 |
p. 797-809
13 p.
|
article
|
| 9 |
Interface-state characteristics of GaN/GaAs MIS capacitors
|
Lakshmi, E.
|
|
1982
|
25 |
8 |
p. 811-815
5 p.
|
article
|
| 10 |
I–V characteristics of tunnel MOS structures with silicon oxide obtained in RF oxygen plasma
|
Atanassova, E.D.
|
|
1982
|
25 |
8 |
p. 781-789
9 p.
|
article
|
| 11 |
Modeling semiconductor heterojunctions in equilibrium
|
Lundstrom, M.S.
|
|
1982
|
25 |
8 |
p. 683-691
9 p.
|
article
|
| 12 |
Modelling of VHF and microwave power transistors operating in quasi-saturation
|
Alden, A.W.
|
|
1982
|
25 |
8 |
p. 723-731
9 p.
|
article
|
| 13 |
1 ƒ Noise in Ru-based thick-film resistors
|
Chen, T.M.
|
|
1982
|
25 |
8 |
p. 821-827
7 p.
|
article
|
| 14 |
Non-equilibrium ψ s vs V g characteristics of MOS capacitors and related effects
|
Tonner, Paul D.
|
|
1982
|
25 |
8 |
p. 733-739
7 p.
|
article
|
| 15 |
PdInP Schottky diode hydrogen sensors
|
Yousuf, M.
|
|
1982
|
25 |
8 |
p. 753-758
6 p.
|
article
|
| 16 |
PLhenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination
|
Poon, E.
|
|
1982
|
25 |
8 |
p. 699-705
7 p.
|
article
|
| 17 |
The A-MOSFET—A majority carrier accumulation MOSFET
|
Schmidt, Pierre E.
|
|
1982
|
25 |
8 |
p. 777-779
3 p.
|
article
|
| 18 |
The physical behaviour of an n + p silicon solar cell in concentrated sunlight
|
Dhanasekaran, P.Caleb
|
|
1982
|
25 |
8 |
p. 719-722
4 p.
|
article
|
| 19 |
Transport in photo-conductors—I
|
Day, D.J.
|
|
1982
|
25 |
8 |
p. 707-712
6 p.
|
article
|
| 20 |
Transport in photo-conductors—II
|
Shepherd, T.J.
|
|
1982
|
25 |
8 |
p. 713-718
6 p.
|
article
|
Journal description