| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An electrothermal model for threshold switching in thin amorphous chalcogenide films
|
Shaw, M.P.
|
|
1981
|
24 |
3 |
p. 233-248
16 p.
|
artikel
|
| 2 |
Behavior of electrically small depletion mode MOSFETs at low temperature
|
Gaensslen, F.H.
|
|
1981
|
24 |
3 |
p. 215-220
6 p.
|
artikel
|
| 3 |
Deep states in transition metal diffused gallium phosphide
|
Brunwin, R.F.
|
|
1981
|
24 |
3 |
p. 249-256
8 p.
|
artikel
|
| 4 |
Electronic characterization of double-gate thin film transistors
|
Chen, Inan
|
|
1981
|
24 |
3 |
p. 257-261
5 p.
|
artikel
|
| 5 |
Field enhanced carrier generation in MOS-capacitors containing defects
|
Werner, C.
|
|
1981
|
24 |
3 |
p. 275-279
5 p.
|
artikel
|
| 6 |
Localized anodic thinning of GaAs structures
|
Shaw, D.W.
|
|
1981
|
24 |
3 |
p. 281-283
3 p.
|
artikel
|
| 7 |
Ohmic contacts to Si-implanted InP
|
Yamaguchi, Eiichi
|
|
1981
|
24 |
3 |
p. 263-265
3 p.
|
artikel
|
| 8 |
Properties of high performance background limited p type Si:Zn photoconductors
|
Sclar, N.
|
|
1981
|
24 |
3 |
p. 203-213
11 p.
|
artikel
|
| 9 |
Stress-sensitive properties of silicon-gate MOS devices
|
Mikoshiba, Hiroaki
|
|
1981
|
24 |
3 |
p. 221-232
12 p.
|
artikel
|
| 10 |
Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage
|
Lee, Han-Sheng
|
|
1981
|
24 |
3 |
p. 267-273
7 p.
|
artikel
|
| 11 |
Third international conference on hot electrons in semiconductors
|
|
|
1981
|
24 |
3 |
p. 285-
1 p.
|
artikel
|
| 12 |
Transport equations for the analysis of heavily doped semiconductor devices
|
Lundstrom, M.S.
|
|
1981
|
24 |
3 |
p. 195-202
8 p.
|
artikel
|
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