| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical model for high-low-emitter (HLE) solar cells in concentrated sunlight
|
Shen, Wen-Zen
|
|
1981
|
24 |
11 |
p. 1025-1037
13 p.
|
artikel
|
| 2 |
A note on IC-yield statistics
|
Warner Jr., R.M.
|
|
1981
|
24 |
11 |
p. 1045-1047
3 p.
|
artikel
|
| 3 |
A pinhole model for metal-insulator-semiconductor solar cells
|
Rothwarf, A.
|
|
1981
|
24 |
11 |
p. 1067-1070
4 p.
|
artikel
|
| 4 |
Bulk charge effects in VLSI MOSFET's
|
Kumar, Rajendra
|
|
1981
|
24 |
11 |
p. 1071-1074
4 p.
|
artikel
|
| 5 |
Degradation mechanism for silicon p +-n junctions under forward bias
|
Hamaker, R.W.
|
|
1981
|
24 |
11 |
p. 1001-1008
8 p.
|
artikel
|
| 6 |
Effect of annealing on the Richardson constant of Al-GaAs Schottky diodes
|
Srivastava, A.K.
|
|
1981
|
24 |
11 |
p. 1049-1052
4 p.
|
artikel
|
| 7 |
Electrical characterization of crystal defects and oxygen in czochralski silicon using a gate-controlled diode
|
Matsuoka, Y.
|
|
1981
|
24 |
11 |
p. 1015-1023
9 p.
|
artikel
|
| 8 |
Electric measurement and modelling of the emitter base junction behaviour of VLSI silicon transistor
|
Sebille, D.
|
|
1981
|
24 |
11 |
p. 1053-1058
6 p.
|
artikel
|
| 9 |
Memory-window-size-temperature dependence of the metal-nitride-oxide-silicon (MNOS) structure
|
Manning, R.W.
|
|
1981
|
24 |
11 |
p. 1039-1043
5 p.
|
artikel
|
| 10 |
On the pinhole model for MIS diodes
|
Fonash, S.J.
|
|
1981
|
24 |
11 |
p. 1075-1076
2 p.
|
artikel
|
| 11 |
Spectroscopic line fitting to DLTS data
|
Stannard, J.E.
|
|
1981
|
24 |
11 |
p. 1009-1013
5 p.
|
artikel
|
| 12 |
The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETs
|
Lee, Han-Sheng
|
|
1981
|
24 |
11 |
p. 1059-1066
8 p.
|
artikel
|
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