| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate two-port model for the MOS transistor in the pre-pinchoff region
|
Kumar, Umesh
|
|
1980
|
23 |
4 |
p. 403-404
2 p.
|
artikel
|
| 2 |
Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K
|
Touboul, A.
|
|
1980
|
23 |
4 |
p. 335-343
9 p.
|
artikel
|
| 3 |
A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device
|
Ho, Allen P.I.
|
|
1980
|
23 |
4 |
p. 305-315
11 p.
|
artikel
|
| 4 |
Characterization of surface states in HCl-grown oxides using MOS transient currents
|
Esqueda, Paul D.
|
|
1980
|
23 |
4 |
p. 365-375
11 p.
|
artikel
|
| 5 |
Design criteria for GaAs MESFETs related to stationary high field domains
|
Eastman, L.F.
|
|
1980
|
23 |
4 |
p. 383-389
7 p.
|
artikel
|
| 6 |
1/f; noise model for MOSTs biased in nonohmic region
|
Vandamme, L.K.J.
|
|
1980
|
23 |
4 |
p. 325-329
5 p.
|
artikel
|
| 7 |
Grown junction GaAs solar cells with a thin graded band-gap Al x Ga1−x As surface layer
|
Kordos, P.
|
|
1980
|
23 |
4 |
p. 399-400
2 p.
|
artikel
|
| 8 |
High frequency noise properties of a double avalanche region (DAR) IMPATT diode
|
Datta, D.N.
|
|
1980
|
23 |
4 |
p. 377-382
6 p.
|
artikel
|
| 9 |
Model for 1/f; noise in MOS transistors biased in the linear region
|
Vandamme, L.K.J.
|
|
1980
|
23 |
4 |
p. 317-323
7 p.
|
artikel
|
| 10 |
Normalized representation of the avalanche breakdown behaviour in one-sided abrupt junctions
|
Albrecht, H.
|
|
1980
|
23 |
4 |
p. 357-364
8 p.
|
artikel
|
| 11 |
On the mobility of polycrystalline semiconductors
|
Martinez, J.
|
|
1980
|
23 |
4 |
p. 297-303
7 p.
|
artikel
|
| 12 |
Scanning electron microscope measurements on short channel MOS transistors
|
Wilson, C.L.
|
|
1980
|
23 |
4 |
p. 345-356
12 p.
|
artikel
|
| 13 |
Simulation of semiconductor transport using coupled and decoupled solution techniques
|
Buturla, E.M.
|
|
1980
|
23 |
4 |
p. 331-334
4 p.
|
artikel
|
| 14 |
Study of microplasma breakdown in schottky barrier diodes by means of a modulation method
|
Zaitsevskij, I.L.
|
|
1980
|
23 |
4 |
p. 401-403
3 p.
|
artikel
|
| 15 |
Using the C-V curve of an mis diode to examine the trapping levels in a semiconductor containing many discrete traps
|
Cook, R.K.
|
|
1980
|
23 |
4 |
p. 391-397
7 p.
|
artikel
|
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